Etch-free low loss silicon waveguides using hydrogen silsesquioxane oxidation masks

Nezhad, Maziar P.; Bondarenko, Olesya; Khajavikhan, Mercedeh; Simić, Aleksandar; Fainman, Yeshaiahu

doi:10.1364/oe.19.018827

Cited by 35 publications

(25 citation statements)

References 13 publications

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“…The LOCOS method utilizes a protective stack, consisting of a thin thermal pad oxide layer overlaid by a thicker LPCVD silicon nitride, to mask the waveguides during the growth process of the field oxide. Similar processes have been reported to make rib [8][9][10][11] and square-like [12] silicon waveguides. The estimated propagation loss ranges from 0.35 dB/cm to 2 dB/cm, with a minimum dimension of 300 nm (FWHM) × 85 nm (height).…”

Section: Introductionsupporting

confidence: 61%

Low-loss photonic wires defined by local oxidation of silicon (LOCOS)

Xiong

Ibrahim

2012

SPIE Proceedings

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We demonstrate low-loss photonic wire waveguides, in both the straight and bent waveguide configurations, fabricated by the LOCal Oxidation of Silicon (LOCOS) process, using the standard optical lithography. The oxidation in the LOCOS process produces waveguides in submicron dimensions with ultra-smooth sidewalls. The Full-Width HalfMaximum (FWHM) of the fabricated LOCOS wire waveguide is approximately 650 nm and the height is 280 nm. We used the cut-back method to measure the propagation loss of the TE (x-polarized) mode. The average propagation loss measured by the cut-back method was 8.78 dB/cm, while the minimum measured propagation loss achieved was 7.18 dB/cm for simple straight waveguides. The propagation loss is expected to be lower, as we include the scattering loss in the measurements. The measured bending loss of the LOCOS wire waveguide with a bending radius of 5 um is as low as 0.0089 dB/90 o bend for the TE mode. To the best of knowledge, this is the first direct measurement in propagation loss and bending loss for LOCOS wire waveguides.

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Section: Introductionsupporting

confidence: 61%

Low-loss photonic wires defined by local oxidation of silicon (LOCOS)

Xiong

Ibrahim

2012

SPIE Proceedings

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“…As a by-product, the scattering loss of the fabricated devices is drastically reduced, allowing for optical resonators with ultrahigh quality factors (Q factors) to be achieved. Recently, several successful demonstrations of microring resonators fabricated using the LOCOS technique while achieving very high Q factors (up to 7.6 · 10 5 ) were reported [7][8][9].…”

mentioning

confidence: 99%

Ultrahigh-Q silicon resonators in a planarized local oxidation of silicon platform

et al. 2015

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We describe a platform for the fabrication of smooth waveguides and ultrahigh-quality-factor (Q factor) silicon resonators using a modified local oxidation of silicon (LOCOS) technique. Unlike the conventional LOCOS process, our approach allows the fabrication of nearly planarized structures, supporting a multilayer silicon photonics configuration. Using this approach we demonstrate the fabrication and the characterization of a microdisk resonator with an intrinsic Q factor that is one of the highest Q factors achieved with a compact silicon-on-insulator platform.

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“…In SOI, propagation losses as low as 0.3 dB/cm [51,59] have been achieved at a wavelength of 1550 nm -a value that is similar to competing photonics technologies outlined in Table 1. Reducing photon loss is an essential requirement in linear optics quantum applications, since error correction of nonheralded photon losses is extremely challenging [27].…”

Section: Silicon Nanophotonics For Quantum Opticsmentioning

confidence: 53%

“…Unfortunately, plasma dispersion is an inherently lossy phase modulation mechanism since a change in the refractive index caused by a free-carrier concentration change also results in a change in absorption [69]. While thermal time constants in SOI are generally in the microsecond range, small temperature changes produce large phase shifts (dn/dt = 1.86·10 -4 K -1 [59]) -enabling low-loss phase shifters measuring just a few tens of microns [59,70]. Small phase differences caused by waveguide edgewall roughness are accumulated throughout an interferometer mesh, resulting in an initially unknown unitary evolution.…”

Section: Large-scale Linear Optical Circuitsmentioning

confidence: 99%

Large-scale quantum photonic circuits in silicon

et al. 2016

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Quantum information science offers inherently more powerful methods for communication, computation, and precision measurement that take advantage of quantum superposition and entanglement. In recent years, theoretical and experimental advances in quantum computing and simulation with photons have spurred great interest in developing large photonic entangled states that challenge today's classical computers. As experiments have increased in complexity, there has been an increasing need to transition bulk optics experiments to integrated photonics platforms to control more spatial modes with higher fidelity and phase stability. The silicon-on-insulator (SOI) nanophotonics platform offers new possibilities for quantum optics, including the integration of bright, nonclassical light sources, based on the large third-order nonlinearity (χ (3) ) of silicon, alongside quantum state manipulation circuits with thousands of optical elements, all on a single phase-stable chip. How large do these photonic systems need to be? Recent theoretical work on Boson Sampling suggests that even the problem of sampling from ~30 identical photons, having passed through an interferometer of hundreds of modes, becomes challenging for classical computers. While experiments of this size are still challenging, the SOI platform has the required component density to enable low-loss and programmable interferometers for manipulating hundreds of spatial modes.Here, we discuss the SOI nanophotonics platform for quantum photonic circuits with hundreds-to-thousands of optical elements and the associated challenges. We compare SOI to competing technologies in terms of requirements for quantum optical systems. We review recent results on large-scale quantum state evolution circuits and strategies for realizing high-fidelity heralded gates with imperfect, practical systems. Next, we review recent results on silicon photonics-based photonpair sources and device architectures, and we discuss a path towards large-scale source integration. Finally, we review monolithic integration strategies for single-photon detectors and their essential role in on-chip feed forward operations.

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Etch-free low loss silicon waveguides using hydrogen silsesquioxane oxidation masks

Cited by 35 publications

References 13 publications

Low-loss photonic wires defined by local oxidation of silicon (LOCOS)

Low-loss photonic wires defined by local oxidation of silicon (LOCOS)

Ultrahigh-Q silicon resonators in a planarized local oxidation of silicon platform

Large-scale quantum photonic circuits in silicon

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