Estimation of the Debye temperature of diamond‐like semiconducting compounds by means of the Lindemann rule

Abstract

Application of the Lindemann rule t o the estimation of the Debye temperature 8 of diamond like semiconducting compounds is discussed. The classical formula of LINDE-YANN was modified by a constant K,: 8 = Kl vT,/A . v2/3 + K,. The constants Kl and K , are given for AIIIBV, AIIBVI, AIIBIVCz and AIBIIICTI compounds. These were calculated as well from X-ray diffraction data as from 8 evaluated from specific heat capacity and elastic constants.Es wird die Anwendung der Lindemann-Regel zur Abschiitzung von Debye-Temperaturen 8 fur diamantartige halbleitende Verbindungen diskutiert. Die klassische LINDE- MANN-Formel wird durch eine Konstante K, erweitert: 8 = Kl f T m / A -v2/s f K,. DieKonstanten Kl und K , sind fiir AIIIBV-, AIIBvI-, AIIBIVCT-und AIBIIICYI-Verbindungen angegeben. Ihre Berechnung erfolgt sowohl a,us Rontgenbeugungsdaten als auch aus 8-Werten, die sich aus der spezifischen Warmekapazitiit und elastischen Konstanten herleiten.

Preparation, structure and thermal properties of CuGa5Se8

“…At room temperature the effective value of Θ XR was found to be 227±5 K. The Debye temperatures Θ D were also calculated from the melting temperature T m using the Lindemann approximate formulas given for the chalcopyrite semiconducting compounds A 1 B 3 C 6 2 in [22,23]. It is known that the value of Θ D depends on both the method and temperature of measurement, and the method of determining the Debye temperature influences on the Lindemann constants.…”

“…The Θ D C values at 0 K for the same chalcopyrite compounds were derived from the low temperature heat capacity measurements [22][23][24][25]. Using these data the following relationships were found [22,23]:…”

“…The X-ray temperatures Θ XR for a number of semiconductors with chalcopyrite structure (including CuGaS 2 , CuInS 2 , AgGaS 2 , CuGaSe 2 ) have been determined at room temperature by X-ray diffraction [16,22,23]. The Θ D C values at 0 K for the same chalcopyrite compounds were derived from the low temperature heat capacity measurements [22][23][24][25]. Using these data the following relationships were found [22,23]:…”

“…It is known that the value of Θ D depends on both the method and temperature of measurement, and the method of determining the Debye temperature influences on the Lindemann constants. The X-ray temperatures Θ XR for a number of semiconductors with chalcopyrite structure (including CuGaS 2 , CuInS 2 , AgGaS 2 , CuGaSe 2 ) have been determined at room temperature by X-ray diffraction [16,22,23]. The Θ D C values at 0 K for the same chalcopyrite compounds were derived from the low temperature heat capacity measurements [22][23][24][25].…”

Trends in the high-temperature heat capacities of ternary chalcopyrite semiconductors

“…Using the 0o values from [10][11][12], we fitted relation (1) to the measured heat capacities (Figs 1 and 2) with the parameters N and ck as adjustable parameters. We found that a value of N = 3 must be used in all cases.…”