Crystal Growth and Properties of the CuIn5S8 and AgIn5S8 Compounds

Annealing effects on the structural and optical properties of AgIn5S8 thin films

“…becomes in the (3 1 1) direction. These preferable (1 1 1), (4 2 0) and (3 1 1) orientations of the as-grown, thermally annealed at 450 and 600 K, respectively, agree well with our previous reported data for thin film and single crystal [4,7], with that reported for AgIn 5 S 8 thin films grown by the pulsed laser deposition technique [3], with that reported for films grown by the spray technique [8], and with that reported for grown by the sulphurization of Ag-In alloy films in sulphur vapour [5,9].…”

“…The very slight decrease in the value of the lattice constant as annealing temperature is raised may be attributed to the re-orientation of the crystallites in the preferable direction. The values still strongly agree with that reported for thin film and single crystals as well [6][7][8]11,12].…”

“…The value of the direct allowed transition energy band gaps are found to be 1.78, 1.74 and 1.62 eV for the as-grown, and for the samples annealed at 450 and 600 K, respectively. The value of the direct transition band gap being 1.78 eV coincides with that reported for AgIn 5 S 8 thin films grown by the pulsed laser technique [3] and with that reported for AgIn 5 S 8 single crystals [8]. It is worth noting that the fitting procedure was carried out by a special high-convergence minimization program that makes use of regression and residual sums of squares (R 2 ), coefficient of determination and residual mean squares statistical analysis.…”

The Ag2S–In2S3–Si(Ge)S2 systems and crystal structure of quaternary sulfides Ag2In2Si(Ge)S6

“…The crystallographic parameters and the melting points of the initial compounds and of the intermediate compounds of the quasi-binary systems are summarized in Table 1 [18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37]. The Ag 2 S-SiS 2 and Ag 2 S-GeS 2 systems were studied repeatedly, therefore the literature data on the crystal structure of the ternary compounds and phase diagrams of these systems are quite dissimilar.…”

Photoconductivity kinetics in AgIn5S8 thin films

“…AgIn 5 S 8 thin films are attracting considerable attention [1][2][3][4][5][6][7][8] due to their technological applications. It has been shown that the photosensitive AgIn 5 S 8 /(InSe, GaSe) heterojunctions can be fabricated using bulk crystals grown from the melt and from the vapor phase or polycrystalline thin films of the ternary compound.…”