ESD Behavior of AlGaN/GaN HEMT on Si: Physical Insights, Design Aspects, Cumulative Degradation and Failure Analysis

Shankar, Bhawani; Soni, Ankit; Singh, Manikant; Soman, Rohith; Bhat, K. N.; Raghavan, Srinivasan; Bhat, Navakanta; Shrivastava, Mayank

doi:10.1109/vlsid.2017.57

Cited by 4 publications

(4 citation statements)

References 7 publications

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“…uring the past decade, Gallium nitride (GaN) has attracted great attention due to its impressive properties like wide bandgap (3.4 eV), high breakdown field (3.3 MV/cm) and low dielectric constant (9). Moreover, the large two-dimensional (2-D) electron gas concentration confined by a larger conduction band discontinuity between GaN and AlGaN and the presence of polarization fields enhances the carrier mobility (1500-2000 cm -2 /V) in AlGaN/GaN material system [1]. As a result, the high two-dimensional electron gas (2DEG) density (10 13 cm -2 ), high electron peak velocity (3×10 7 cm/s) and high electron saturation velocity (1.5×10 7 cm/s) constitute important advantages of AlGaN/GaN hetero-junction with respect to their silicon (Si) and GaAs counterpart [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…The role of the Schottky gate and MESA is investigated using special test structures. Besides, the influence of piezoelectric field, carrier trapping, and self-heating on ESD behavior are studied [1,16,17]. Due to the respectable noise performance, GaN HEMT technology are attracting a significant interest not only for power applications, but also for low-noise amplifications [18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

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Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress

Chen

et al. 2021

IEEE J. Electron Devices Soc.

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The ESD effects on the E-mode AlGaN/GaN high-electron mobility transistors (HEMTs) with p-GaN gate are investigated under repetitive TLP pulses. Firstly, the degradation and recovery of output, transfer characteristics, gate-leakage characteristics and low-frequency noises (LFN) are analyzed in detail before and after reverse electrostatic discharge (ESD) stress. The experimental results show that the electrical characteristics of the devices gradually degraded as the transmission line pulse (TLP) pules increased. Subsequently, the LFN measurements are performed over the frequency range of 1 Hz-10 KHz by increasing TLP pulses. Finally, the recovery tendency of DC (direct current) characteristics and trap density are studied and discussed after resting the device at room temperature for 1 to 3 months. These results physically confirm that the mechanism of the performance degradation and recovery of the devices could be attributed to the trapping and releasing processes of electrons in the p-GaN layer and AlGaN barrier layer of AlGaN/GaN HEMTs, which change the electric field distribution under the gate.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress

Chen

et al. 2021

IEEE J. Electron Devices Soc.

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“…In 2017, Shankar et al [24] reported a research of the physical mechanisms of the safe operating area (SOA) and the avalanche instability in GaN HEMTs utilizing a sub-μs pulse characterization. Fig.…”

Section: Electrostatic Discharge (Esd)mentioning

confidence: 99%

“…(Color online) SEM and TEM images revealing different types of failure mechanisms dominant during test under (a) dark and (c) UV conditions. (b) TCAD contour revealing hole distribution at breakdown voltage, under the -6 V gate bias condition[24] .…”

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confidence: 99%

Recent progress of physical failure analysis of GaN HEMTs

Xi¹,

Du²,

Sun³

et al. 2021

J. Semicond.

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Gallium nitride (GaN)-based high-electron mobility transistors (HEMTs) are widely used in high power and high frequency application fields, due to the outstanding physical and chemical properties of the GaN material. However, GaN HEMTs suffer from degradations and even failures during practical applications, making physical analyses of post-failure devices extremely significant for reliability improvements and further device optimizations. In this paper, common physical characterization techniques for post failure analyses are introduced, several failure mechanisms and corresponding failure phenomena are reviewed and summarized, and finally device optimization methods are discussed.

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An SEB Hardened AlGaN/GaN HEMT With Barrier Interlayer

Zhang

Wang

Wu³

et al. 2020

IEEE Access

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A new single event burnout (SEB) hardened AlGaN/GaN structure with a thin barrier interlayer (IL) is presented in this work. The proposed hardened structure is compared with the simulation results of the conventional structure. The comparative analysis demonstrates that the IL lifts the conduction band energy in buffer layer and a new quantum well is formed. The quantum well limits the electrons induced by heavy ion below the second channel into the first channel. Thus, better SEB performance is achieved compared with the conventional structure. Moreover, the breakdown characteristic of the new structure is significantly improved, while the output characteristic is slightly reduced. Under the condition that the two structures are irradiated vertically by heavy ion having the linear energy transfer (LET) value of 0.6 pC/µm, the SEB threshold voltage of the conventional structure is 280 V, while the hardened structure can achieve 375 V. INDEX TERMS GaN, high-electron mobility transistor (HEMT), single event burnout (SEB), barrier interlayer, SEB threshold voltage.

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ESD Behavior of AlGaN/GaN HEMT on Si: Physical Insights, Design Aspects, Cumulative Degradation and Failure Analysis

Cited by 4 publications

References 7 publications

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress

Recent progress of physical failure analysis of GaN HEMTs

An SEB Hardened AlGaN/GaN HEMT With Barrier Interlayer

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