Error Rates in Deterministic Ion Implantation for Qubit Arrays

Murdin, B. N.; Cassidy, Nathan; Cox, D. C.; Webb, R.P.; Curry, Richard J.

doi:10.1002/pssb.202000615

Cited by 3 publications

(2 citation statements)

References 18 publications

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“…The dark‐count value (false‐positive detection rate) of the secondary electron detectors in the P‐NAME system is ≈8 × 10 −6 per typical 1 μs pulse. As shown by Murdin et al, at such a low dark‐count rate, the ability to perform single‐ion deterministic doping is limited solely by the ion implantation detection efficiency [ 10 ] which, for P‐NAME, was measured in the same manner as Cassidy et al, [ 37 ] to be 87 (±7)% for 50 keV Sb into 200 nm SiO 2 on p‐type (boron doped) Si (see Figure S3, Supporting Information). For measuring the detection efficiency, the average number of ions within a given pulse ( λ ) was varied by adjusting the pulse width for a fixed ion beam current.…”

Section: System Overview and Ion Beam Lithographymentioning

confidence: 99%

“…[ 8 ] The use of FIB systems specifically for low‐dose impurity‐ion doping has been limited, though its potential is substantial with applications in developing fields such as quantum technologies. For example, when the FIB current is reduced to the point of a single‐ion implantation, it becomes possible to deterministically create color centers for qubit array formation, [ 9–11 ] with control over dopant number and nanoscale positioning being crucial for device performance. [ 12,13 ] Such applications of ion implantation in quantum technologies often also demand the ability to deliver a variety of isotopically selected species for implantation in order to yield optimal performance with regard to properties such as nuclear spin.…”

Section: Introductionmentioning

confidence: 99%

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A High‐Resolution Versatile Focused Ion Implantation Platform for Nanoscale Engineering

Adshead,

Coke,

Aresta

et al. 2023

Adv Eng Mater

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The ability to spatially control and modify material properties on the nanoscale, including within nanoscale objects themselves, is a fundamental requirement for the development of advanced nanotechnologies. We demonstrate the development of a platform for nanoscale advanced materials engineering (P‐NAME) designed to meet this demand. P‐NAME delivers a high‐resolution focused ion beam system with a co‐incident scanning electron microscope and secondary electron detection of single‐ion implantation events. We demonstrate the isotopic mass resolution capability of the P‐NAME system for a wide range of ion species, offering access to the implantation of isotopes that are vital for nanomaterials engineering and nano‐functionalisation. The performance of the isotopic mass selection is independently validated using secondary ion mass spectrometry (SIMS) for a number of species implanted into intrinsic silicon. The SIMS results are shown to be in good agreement with dynamic ion implantation simulations, demonstrating the validity of this simulation approach. We also demonstrate the wider performance capabilities of P‐NAME including sub‐10 nm ion beam imaging resolution and the ability to perform direct‐write ion beam doping and nanoscale ion lithography.This article is protected by copyright. All rights reserved.

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Section: System Overview and Ion Beam Lithographymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A High‐Resolution Versatile Focused Ion Implantation Platform for Nanoscale Engineering

Adshead,

Coke,

Aresta

et al. 2023

Adv Eng Mater

Self Cite

View full text Add to dashboard Cite

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Image charge detection of ion bunches using a segmented, cryogenic detector

Räcke

Meijer

Spemann

2022

Journal of Applied Physics

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The response of a dedicated image charge detector to a single passage of small ion bunches was studied. This detector was designed and built in our labs aiming for a maximized signal-to-noise ratio (SNR) with the motivation to enable single ion detection for deterministic ion implantation, a key technique for solid state based quantum technologies, in the future. It is shown how segmentation of the detector with the appropriate combination of the individual segment signal channels significantly increases the SNR. Additionally, the detector is cryogenically cooled to temperatures down to 163 K, further enhancing the SNR. The detection sensitivity of this detector prototype was measured to be 80 elementary charges for [Formula: see text], detecting 4 keV Xe[Formula: see text] ion bunches. At this SNR, the false-positive error rate is expected to be 0.1%. Comparing the measured sensitivity with a theoretical estimation yielding 22 elementary charges for [Formula: see text], the presented results lead the way to further optimizations of the detector components and the signal analysis techniques, necessary to realize single ion detection.

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Roadmap for focused ion beam technologies

Höflich,

Hobler,

Allen

et al. 2023

Applied Physics Reviews

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The focused ion beam (FIB) is a powerful tool for fabrication, modification, and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was originally intended for photomask repair in the semiconductor industry, there are now many different types of FIB that are commercially available. These instruments use a range of ion species and are applied broadly in materials science, physics, chemistry, biology, medicine, and even archaeology. The goal of this roadmap is to provide an overview of FIB instrumentation, theory, techniques, and applications. By viewing FIB developments through the lens of various research communities, we aim to identify future pathways for ion source and instrumentation development, as well as emerging applications and opportunities for improved understanding of the complex interplay of ion–solid interactions. We intend to provide a guide for all scientists in the field that identifies common research interest and will support future fruitful interactions connecting tool development, experiment, and theory. While a comprehensive overview of the field is sought, it is not possible to cover all research related to FIB technologies in detail. We give examples of specific projects within the broader context, referencing original works and previous review articles throughout.

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Error Rates in Deterministic Ion Implantation for Qubit Arrays

Cited by 3 publications

References 18 publications

A High‐Resolution Versatile Focused Ion Implantation Platform for Nanoscale Engineering

A High‐Resolution Versatile Focused Ion Implantation Platform for Nanoscale Engineering

Image charge detection of ion bunches using a segmented, cryogenic detector

Roadmap for focused ion beam technologies

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