A High‐Resolution Versatile Focused Ion Implantation Platform for Nanoscale Engineering

Abstract

The ability to spatially control and modify material properties on the nanoscale, including within nanoscale objects themselves, is a fundamental requirement for the development of advanced nanotechnologies. We demonstrate the development of a platform for nanoscale advanced materials engineering (P‐NAME) designed to meet this demand. P‐NAME delivers a high‐resolution focused ion beam system with a co‐incident scanning electron microscope and secondary electron detection of single‐ion implantation events. We demonstrate the isotopic mass resolution capability of the P‐NAME system for a wide range of ion species, offering access to the implantation of isotopes that are vital for nanomaterials engineering and nano‐functionalisation. The performance of the isotopic mass selection is independently validated using secondary ion mass spectrometry (SIMS) for a number of species implanted into intrinsic silicon. The SIMS results are shown to be in good agreement with dynamic ion implantation simulations, demonstrating the validity of this simulation approach. We also demonstrate the wider performance capabilities of P‐NAME including sub‐10 nm ion beam imaging resolution and the ability to perform direct‐write ion beam doping and nanoscale ion lithography.This article is protected by copyright. All rights reserved.