Error analysis of boundary condition approximations in the modeling of coaxially‐gated carbon nanotube field‐effect transistors

Abstract

In the modeling of carbon nanotube field-effect transistors, non-physical boundary conditions are often employed at the borders of the simulation space. This paper investigates the consequences of imposing these boundary conditions on common geometries, and proposes solutions which reduce the error without compromising simulation efficiency.

Critique of high-frequency performance of carbon nanotube FETs

“…Methods involving either an effective-mass wave equation, or a Hamiltonian based on atomistic considerations, have been employed, and, under suitably low-bias conditions, should give similar results [13], provided the simulation space is properly bounded [14].…”

A multi-scale model for mobile and localized electroluminescence in carbon nanotube field-effect transistors

“…The simulation space is shown below in figure 1 and is closed by null-Neumann boundaries. The length of the contacts l sd is chosen to be sufficiently large as to minimize the error introduced by these non-physical boundary conditions [10].…”

“…The simulation space is shown in figure 1 and is closed by null-Neumann boundaries. The length of the contacts l sd is chosen to be sufficiently large as to minimize the error introduced by these non-physical boundary conditions [10]. A multi-scale model is required because the transport of interest is both quantum mechanical and classical in nature.…”