Critique of high-frequency performance of carbon nanotube FETs

Pulfrey, D.L.

doi:10.1109/essderc.2007.4430921

Cited by 6 publications

(1 citation statement)

References 28 publications

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“…The advantages of MOS‐CNTFET in comparison with the SB‐CNTFET include higher ON current, higher I ON / I OFF ratio and lower subthreshold swing [6, 7]. On the other hand, the MOS‐CNTFET has a major problem in the frequency response making it unsuitable for high‐frequency applications [8, 9].…”

Section: Introductionmentioning

confidence: 99%

Performance and electrical characteristics of hybrid carbon nanotube field effect transistors

Ossaimee

Shaker

2016

Micro & Nano Letters

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The performance and electrical characteristics of hybrid carbon nanotube field effect transistor (CNTFET) are studied. Hybrid CNTFET consists of heavily doped carbon nanotube (CNT) as a one contact connected to intrinsic CNT as a channel. The opposite side of the channel is connected to a metal as the other contact. If the source is the metal and the drain is the heavily doped, this type is called metal-semiconductor hybrid CNT or MSH-CNTFET. While when the source is the heavily doped and the drain is the metal, this is called semiconductor-metal hybrid CNT or SMH-CNTFET. The electrical characteristics of the device has been studied using a two-dimensional (2D) quantum mechanical simulator by solving 2D Poisson's equation self consistently with Non-equilibrium Green function (NEGF). The proposed devices are found to overcome the ambipolar conduction of Schottky barrier CNTFETs and improve frequency performance of metal-oxide-semiconductor CNTFETs.

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Section: Introductionmentioning

confidence: 99%