Erratum to: Effect of deposition temperature on dielectric properties of PECVD Ta2O5 thin film

Abstract

Tantalum oxide film formation by plasma-enhanced chemical vapour deposition (PECVD) using TaCI~ as a source material was examined. The effects of deposition temperature on the formation, structure and electric properties of the Ta205 film were investigated for AI/Ta205/ p-Si (MTS) capacitors. The deposition rate and refractive index increased with increasing deposition temperature. It was found that the structure of Ta205 deposited by PECVD was amorphous as-deposited. However, crystalline 6-Ta~05 of hexagonal structure was formed by a 700 ~ 1 h heat treatment in argon. Capacitance and relative dielectric constant of the PECVD Ta205 were found to be 2.54 fF ~m -2 and 23.5, respectively. The PECVD films obtained in this study have higher dielectric constants and remarkably better general film characteristics than those obtained by other deposition methods.