Bismuth doped Y 2 O 3 : Eu was used as a red phosphor with a very high efficiency and an appropriate emission wavelength of around 310-400 nm. This red phosphor was synthesized by the solid state reaction which is normally used in the field of white LEDs. In this study, we synthesized Y 2 O 3 : Eu, Bi phosphors using a solid state reaction. We investigated the effect of the Eu 3+ and Bi 3+ concentrations and additive fluxes on the emission characteristics. The fabricated phosphors were investigated by analyzing their particle size and crystal structure with scanning electron microscopy and X-ray diffraction (XRD). Their photoluminescence (PL) spectra were also measured at room temperature.

An anti-reflection (AR) coating was deposited on the surface of flat panel displays to increase the efficiency of the light emission. The use of low reflective index material can decrease the thickness of the optical coating layer. In this work, low refractive index SiOCF:H films were deposited on P-type (100) Si and glass substrates by the plasma enhanced chemical vapor deposition (PECVD) method using an SiH 4 , CF 4 and N 2 O gas mixture. The refractive index of the SiOCF:H film continuously decreased with increasing deposition temperature and rf power, exhibiting a minimum value of 1.3854. As the rf power was increased, the fluorine content of the film increased linearly to 5.41% at an rf power of 180 W. The rms surface roughness decreased to 1.0 nm with increasing rf power, with the optimum conditions being observed for the film deposited at an rf power of 140 W.