Erratum: ‘‘Nitridation process of sapphirre substrate surface and its effect on the growth of GaN’’ [J. Appl. Phys. <b>79</b>, 3487 (1996)]

Uchida, Kazuo; Watanabe, Akiyoshi; Yano, Fumiko; Kouguchi, M.; Tanaka, Takanori; Minagawa, S.

doi:10.1063/1.363832

Cited by 71 publications

(110 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The substrates were then nitridated in flowing NH 3 at 1050 1C for 30 min. During the nitridation, a thin layer of aluminium nitride (AlN) forms on the sample surface [9]. After nitridation, the temperature was decreased to the growth temperature between 550 and 650 1C and the carrier gas was switched from H 2 to N 2 for the growth of InN.…”

Section: Methodsmentioning

confidence: 99%

Growth of InN by vertical flow MOVPE

Suihkonen

Sormunen

Rangel-Kuoppa

et al. 2006

Journal of Crystal Growth

View full text Add to dashboard Cite

InN films were grown by metal-organic vapour phase epitaxy (MOVPE). The growth was performed in a MOVPE apparatus with a vertical reactor geometry optimized for the growth of GaN. The reactor geometry is found to cause enhanced cracking of NH 3 , and the growth rate is limited by the amount of reactive indium in the temperature range of 550-650 1C. The grown films are characterized comprehensively. Experimental results indicate that the InN films, grown on sapphire substrates, contain metallic indium and the film surface consist of hexagonal islands. Growth temperature has a strong effect on the surface island size, optical quality and electrical properties of the InN layer. The desorption of nitrogen is assumed to cause the formation of metallic indium above 550 1C. r

show abstract

Section: Methodsmentioning

confidence: 99%

Growth of InN by vertical flow MOVPE

Suihkonen

Sormunen

Rangel-Kuoppa

et al. 2006

Journal of Crystal Growth

View full text Add to dashboard Cite

show abstract

“…Several nitridation studies in MOVPE have observed the formation of an amorphous aluminum oxynitride (AlN x O 1Ϫx ) layer, 2,7 while other studies presented evidence for the formation of relaxed crystalline AlN on the sapphire surface. 8,9 Studies on sapphire nitridation in a MBE system using a rf nitrogen plasma suggested the formation of AlN and NO molecules on the sapphire, 3,23 as well as an AlN x O 1Ϫx intermediate compound.…”

Section: Introductionmentioning

confidence: 99%

“…18 The surface morphology of sapphire after nitridation was dependent on the nitrogen source and nitridation condition, i.e., the nitridation time and temperature. A high density of protrusions has been observed after long nitrida-tion (Ͻ20 min) in MOVPE 2,7,12 and MBE using both a rf nitrogen plasma [19][20][21][22] and a constricted plasma 18 sources. With the rf nitrogen plasma source, the formation of protrusions also depends on nitridation temperature.…”

Section: Introductionmentioning

confidence: 99%

X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism

Dwikusuma

Kuech

2003

Journal of Applied Physics

View full text Add to dashboard Cite

The nitridation of c-plane sapphire within the hydride vapor phase epitaxy system was systematically studied as a function of time and ammonia partial pressure using ex situ x-ray photoelectron spectroscopy, reflection high-energy electron diffraction, and atomic force microscopy. During the nitridation process, nitrogen was incorporated into the sapphire surface. There were two different nitrogen chemical bonding states, which can be attributed to N-Al bonds and nitrogen in oxygen-rich environment ͑'N-O'͒. As the nitridation continued, the N 1s intensity increased while the O 1s intensity decreased indicating the growth of a nitrogen-rich layer. The sapphire nitridation process can be modeled as a diffusion couple of AlN and Al 2 O 3 , where N 3Ϫ and O 2Ϫ interdiffuse in the rigid Al 3ϩ framework. Nitrogen diffuses into sapphire and substitutes for oxygen to bond with aluminum. The bond substitution is accompanied by structural changes where the AlN in-plane direction is rotated 30°with respect to the sapphire direction. The replaced oxygen diffuses out to the surface, combines with hydrogen and desorbs as H 2 O. The overall nitridation rate is determined by the slower of the two moving anions. From the x-ray photoelectron spectroscopy data, the chemical diffusion coefficient of nitrogen (D N ) and oxygen (D O ), were estimated. D N was found to be higher than D O , which suggested that the overall nitridation rate was controlled by the diffusion of oxygen to the surface. After nitridation, no protrusions were observed on the surface and no significant changes in the surface roughness were measured when compared to the as-received sapphire.

show abstract

“…In previous reports, sapphire substrate nitridation is usually used to obtain high-quality GaN or ZnO films and control their polarity. [5][6][7][8][9][10][11] However, the understanding of sapphire nitridation mechanism is still very limited, and little attention has been paid to the microstructure of nitridation layers and its effects on polarity of subsequent GaN or ZnO epitaxial films since it is very difficult to obtain a nitridation layer with well-defined structure. Mikroulis et al 10 reported a 1.5 nm thick nitridation layer formed at 750°C, and an undetectable layer at 200°C.…”

mentioning

confidence: 99%

Cubic nitridation layers on sapphire substrate and their role in polarity selection of ZnO films

Wang

Mei

et al. 2005

Applied Physics Letters

View full text Add to dashboard Cite

Well-defined cubic AlN ultrathin layers formed by nitridation of Al2O3 (0001) substrate at various temperatures were observed by high-resolution transmission electron microscopy. The polarity of the AlN layers strongly depends on the substrate pretreatment and nitridation temperature. The structure of the AlN layers plays a key role in polarity selection of subsequent ZnO films, and both Zn-polar and O-polar ZnO films could be steadily obtained by control of the cubic AlN layers.

show abstract

Erratum: ‘‘Nitridation process of sapphirre substrate surface and its effect on the growth of GaN’’ [J. Appl. Phys. 79, 3487 (1996)]

Cited by 71 publications

References 0 publications

Growth of InN by vertical flow MOVPE

Growth of InN by vertical flow MOVPE

X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism

Cubic nitridation layers on sapphire substrate and their role in polarity selection of ZnO films

Contact Info

Product

Resources

About