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Selective growth of GaN layers on sapphire substrates is investigated for low-loss optical waveguide structures of active and passive photonic devices. When growth conditions, such as nitridation of the substrate surface and growth temperature, are adjusted to achieve high-density uniform nucleation on the substrate, we found that the cross-sectional shape of GaN waveguides has a rectangular structure with smooth top and side surfaces. At 77 K, we observed stimulated emission from the cleaved facet of an optically pumped selectively grown GaN waveguide with a width of 6 μm and a cavity length of 800 μm. Line narrowing was also achieved: with the full width at half-maximum of the emission spectra decreasing from 11 to 2 nm by increasing a pump power density from 0.013 to 0.05 MW/cm2.

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Articles you may be interested inRealtime scanning microprobe reflection highenergy electron diffraction observations of InGaAs surfaces during molecularbeam epitaxy on InP substrates Measurement of reflection highenergy electron diffraction oscillations during molecularbeam epitaxial growth of GaAs on a rotating substrate

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