Erratum: “Impact of strain on free-exciton resonance energies in wurtzite AlN” [J. Appl. Phys. 102, 123707 (2007)]

Ikeda, Hirokatsu; Okamura, Takahiro; Matsukawa, Kodai; Sota, Takayuki; Sugawara, Mariko; Hoshi, Takayuki; Cantu, P.; Sharma, Rajat; Kaeding, John F.; Keller, S.; Mishra, Umesh K.; Kosaka, Koji; Asai, Keiichiro; Sumiya, S.; Shibata, Tomohiko; Tanaka, Mitsuhiro; Speck, James S.; DenBaars, Steven P.; Nakamura, Shuji; Koyama, Takahiro; Onuma, Takeyoshi; Chichibu, S. F.

doi:10.1063/1.2903974

Cited by 12 publications

(2 citation statements)

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“…1(a), and C ij are the elastic stiffness constants. 2,29 Here, C ij values of the alloys were assumed to obey the Vegard's law. As shown in the representative x-ray reciprocal space mapping (X-RSM) images in Figs.…”

Section: Methodsmentioning

confidence: 99%

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High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m-plane Al1−xInxN epilayers grown on a low defect density m-plane freestanding GaN substrate

Chichibu

Hazu

Furusawa

et al. 2014

Journal of Applied Physics

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Section: Methodsmentioning

confidence: 99%

“…6, representative E g values reported for Al 1Àx In x N alloys so far [2][3][4][5][6]13,15,[46][47][48][49] are plotted by closed characters, and those obtained from Fig. 5(b) are plotted by larger legends denoted by "E g ."…”

Section: B Optical Propertiesmentioning

confidence: 99%

High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m-plane Al1−xInxN epilayers grown on a low defect density m-plane freestanding GaN substrate

Chichibu

Hazu

Furusawa

et al. 2014

Journal of Applied Physics

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Impacts of Dislocations and Point Defects on the Internal Quantum Efficiency of the Near-Band-Edge Emission in AlGaN-Based DUV Light-Emitting Materials

Chichibu

Miyake

Hiramtsu

et al. 2015

III-Nitride Ultraviolet Emitters

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Light polarization characteristics of m-plane AlxGa1−xN films suffering from in-plane anisotropic tensile stresses

Hazu

Hoshi

Kagaya

et al. 2010

Journal of Applied Physics

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Polarization characteristics of the near-band-edge optical transitions in m-plane AlxGa1−xN epilayers suffering from anisotropic stresses were quantified. The epilayers were grown by both ammonia-source molecular beam epitaxy and metalorganic vapor phase epitaxy methods on an m-plane freestanding GaN substrate. The light polarization direction altered from E⊥c to E∥c at the AlN molar fraction, x, between 0.25 and 0.32, where E is the electric field component of the light and ⊥ and ∥ represent perpendicular and parallel, respectively. To give a quantitative explanation for the result, energies and oscillator strengths of the exciton transitions involving three separate valence bands were calculated as functions of strains using the Bir–Pikus Hamiltonian. The calculation predicted that the lowest energy transition (E1) is polarized to the m-axis normal to the surface (X3) for 0<x≤1, meaning that E1 emission is principally undetectable from the surface normal for any in-plane tensile strained AlxGa1−xN. The polarization direction of observable surface emission was predicted to alter from c-axis normal (X1) to c-axis parallel (X2) for the middle energy transition (E2) and X2 to X1 for the highest energy transition (E3) between x=0.25 and 0.32. The experimental results were consistently reproduced by the calculation.

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Erratum: “Impact of strain on free-exciton resonance energies in wurtzite AlN” [J. Appl. Phys. 102, 123707 (2007)]

Cited by 12 publications

References 0 publications

High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m-plane Al1−xInxN epilayers grown on a low defect density m-plane freestanding GaN substrate

High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m-plane Al1−xInxN epilayers grown on a low defect density m-plane freestanding GaN substrate

Impacts of Dislocations and Point Defects on the Internal Quantum Efficiency of the Near-Band-Edge Emission in AlGaN-Based DUV Light-Emitting Materials

Light polarization characteristics of m-plane AlxGa1−xN films suffering from in-plane anisotropic tensile stresses

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