Impacts of Dislocations and Point Defects on the Internal Quantum Efficiency of the Near-Band-Edge Emission in AlGaN-Based DUV Light-Emitting Materials

Chichibu, S. F.; Miyake, Hideto; Hiramtsu, Kazumasa; Uedono, Akira

doi:10.1007/978-3-319-24100-5_5

Cited by 3 publications

(1 citation statement)

References 85 publications

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“…The required crystal quality should be discussed on the basis of point defects at the AlGaN QWs as well as the TDD. When the crystal quality is moderately improved, NRCs derived from point defects must be considered [81] because Al vacancies (V Al ) have been revealed to be NRCs in AlGaN QWs [82]. Carrier localization has been clarified to be the reason why GaN with a high TDD of between 10 8 /cm 2 and 10 9 /cm 2 enables the mass production of InGaN-LEDs [83][84][85].…”

Section: Crystal Quality Of Algan On Alnmentioning

confidence: 99%

A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire

Nagasawa¹,

Hirano²

2018

Applied Sciences

184

111

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This paper reviews the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs), mainly focusing in the work of the authors’ group. The background to the development of the current device structure on sapphire is described and the reason for using a (0001) sapphire with a miscut angle of 1.0° relative to the m-axis is clarified. Our LEDs incorporate uneven quantum wells (QWs) grown on an AlN template with dense macrosteps. Due to the low threading dislocation density of AlGaN and AlN templates of about 5 × 108/cm2, the number of nonradiative recombination centers is decreased. In addition, the uneven QW show high external quantum efficiency (EQE) and wall-plug efficiency, which are considered to be boosted by the increased internal quantum efficiency (IQE) by enhancing carrier localization adjacent to macrosteps. The achieved LED performance is considered to be sufficient for practical applications. The advantage of the uneven QW is discussed in terms of the EQE and IQE. A DUV-LED die with an output of over 100 mW at 280–300 nm is considered feasible by applying techniques including the encapsulation. In addition, the fundamental achievements of various groups are reviewed for the future improvements of AlGaN-based DUV-LEDs. Finally, the applications of DUV-LEDs are described from an industrial viewpoint. The demonstrations of W/cm2-class irradiation modules are shown for UV curing.

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Section: Crystal Quality Of Algan On Alnmentioning

confidence: 99%

A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire

Nagasawa¹,

Hirano²

2018

Applied Sciences

184

111

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Effects of Pre-Metallization on the MOCVD Growth and Properties of Ge-doped AlGaN on AlN/Sapphire Templates

Mirabito

Wang

Redwing

2022

J. Electron. Mater.

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Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys

Reddy

Bryan

et al. 2020

Applied Physics Letters

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In this work, we determine the dependence of the defect transition energies, electronic bands, and surface charge neutrality levels in AlGaN. With Vacuum level as reference, we show that energy transitions of localized defects and the surface Fermi level are independent of the alloy composition as electronic bands diverge with the increase in the bandgap as a function of alloy composition. The invariance of localized states on the alloy composition creates a convenient internal reference energy with respect to which other energy states may be measured. We demonstrate a higher generality to the universality rule with the independence of deep transition states of otherwise shallow donor type defects [(+1/+3) transition for VN] and defect complexes (CN+SiIII) in addition to the earlier predicted independent nature of mid-gap states when they are either the antibonding state between cationic impurities and host anion or acceptors at anion sites.

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Impacts of Dislocations and Point Defects on the Internal Quantum Efficiency of the Near-Band-Edge Emission in AlGaN-Based DUV Light-Emitting Materials

Cited by 3 publications

References 85 publications

A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire

A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire

Effects of Pre-Metallization on the MOCVD Growth and Properties of Ge-doped AlGaN on AlN/Sapphire Templates

Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys

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