High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m-plane Al1−xInxN epilayers grown on a low defect density m-plane freestanding GaN substrate

Abstract

Articles you may be interested inHomoepitaxial AlN thin films deposited on m-plane ( 1 1 ¯ 00 ) AlN substrates by metalorganic chemical vapor deposition

First‐Principles Calculation of Bandgaps of Al1−xInxN Alloys and Short‐Period Al1−xInxN/Al1−yInyN Superlattices

“…The notation in Figure and indicates the number of SL layers, m / n . Experimental values for AlInN alloys are shown for comparison.…”

“…Bandgaps of Al 1− x In x N alloys and m InN/ n AlN SLs as a function of In content x . Experimental data for AlInN alloys are shown for comparison …”

“…Considerable efforts have already been made for understanding the electronic band structure of III–V nitride alloys (InGaN, AlGaN, and AlInN) and SLs (InN/GaN and GaN/AlN) . However, there are few reports in the open literature on the bandgap and on the synthesis of InN/AlN SLs.…”

Defect‐Resistant Radiative Performance of m‐Plane Immiscible Al1−xInxN Epitaxial Nanostructures for Deep‐Ultraviolet and Visible Polarized Light Emitters

“…Whereas, since the growth of high‐quality crystal is herculean, Al 1− x In x N alloys have never been used as light‐emitting media, although their bandgap energies ( E g ) cover full spectrum from UV‐C to near‐infrared (IR) wavelengths. Here, we demonstrate planar vacuum fluorescent display (VFD) devices emitting polarized UV‐C, blue, and green light using m ‐plane oriented Al 1− x In x N 3D epitaxial nanostructures, which are composed of a dense array of ≈50 nm thick nanoboards. The results of positron annihilation spectroscopy (PAS) measurement revealed that the concentration of Al vacancies (V Al ), [V Al ], in all samples are at the lowest of 10 19 cm −3 .…”

Non‐ and semipolar AlInN one‐dimensionally lattice‐matched to GaN for realization of relaxed buffer layers for strain engineering in optically active GaN‐based devices

“…In the literature, there are only very few reports on the growth and characterization of m ‐plane AlInN , most of which are dealing with growth of m ‐plane AlInN on ZnO‐substrates. For AlInN lattice‐matched to the a ‐axis of m ‐GaN substrates, Durand et al observed the strain‐driven formation of cracks along the c ‐direction ().…”