Erratum: “Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy” [Appl. Phys. Lett. <b>103</b>, 032102 (2013)]

Brochen, Stéphane; Brault, J.; Chenot, Sébastien; Leroux, M.; Damilano, B.

doi:10.1063/1.4858978

Cited by 11 publications

(13 citation statements)

References 1 publication

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“…These values are different from the literature data of E a ≈ 20 meV . However, it is well known that as the dopant concentration increases, the dopants start to interact and form an impurity band . The increase in the width of this band decreases the ionization energy .…”

contrasting

confidence: 83%

“…However, it is well known that as the dopant concentration increases, the dopants start to interact and form an impurity band . The increase in the width of this band decreases the ionization energy . For sufficiently high‐dopant concentration, the associated broad impurity band and the conduction (valence) band edge merge leading to the negative ionization energies.…”

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confidence: 99%

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Locally‐Strain‐Induced Heavy‐Hole‐Band Splitting Observed in Mobility Spectrum of p‐Type InAs Grown on GaAs

Wróbel

Umana‐Membreno

Boguski

et al. 2020

Physica Rapid Research Ltrs

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High‐quality Be‐doped InAs layer grown by molecular beam epitaxy on GaAs substrate has been examined via magnetotransport measurements and high‐resolution quantitative mobility spectrum analysis (HR‐QMSA) in the range of 5–300 K and up to 15 T magnetic field. The results show four‐channel conductivity and essential splitting of the most populated hole‐like channel below 55 K. It is concluded that origin of such effect results from the locally strain‐induced interlayer, which direct observation is difficult or impossible via alternative techniques. Based on the magnetotransport data analysis, the multilayer model is proposed, which is implemented into nextnano simulation, giving the proof of the argumentation correctness. These results indicate potential usefulness of HR‐QMSA technique even in the degeneration statistic regime.

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confidence: 83%

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confidence: 99%

Locally‐Strain‐Induced Heavy‐Hole‐Band Splitting Observed in Mobility Spectrum of p‐Type InAs Grown on GaAs

Wróbel

Umana‐Membreno

Boguski

et al. 2020

Physica Rapid Research Ltrs

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“…The activation energy of the Mg acceptors in GaN is approximately E Mg ≈ 245 meV [13] and thus much higher than the O activation energy. The activation energy reduces with acceptor density.…”

Section: Introductionmentioning

confidence: 90%

“…(2) and (3), respectively. The dopant ionization energy depends on the density of proximate doping sites [13] as well as the electric field [9]. In a QW, where continuum and bound populations co-exist, the ionized dopant density according to Eqs.…”

Section: Introductionmentioning

confidence: 99%

Effect of oxygen impurities in semipolar III‐nitride light emitting diodes

Römer

Witzigmann

2016

Physica Status Solidi (a)

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We investigate the effect of oxygen impurities on the internal quantum efficiency of semipolar III‐nitride light emitting diodes (LED) structures grown along the false(202‾1false) direction by means of carrier transport simulations. For the model calculations, realistic doping and impurity profiles obtained by secondary ion mass spectroscopy are used. We discuss the impact of the oxygen impurity density on the operation of the LED and the interaction of the donor‐type oxygen impurities with the acceptor doping. It is shown that up to a certain oxygen concentration, no major degradation of the LED efficiency occurs and that with increasing oxygen impurity density the LED efficiency becomes more sensitive to variations of the acceptor doping profile. The independent variation of the oxygen concentration revealed that oxygen impurities are most critical in the electron blocking layer and the p‐side barrier.

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“…1), the sample is cooled down and taken out of the growth chamber to evaluate the percentage of non-cracked mesas and to measure the reflectivity. Then, the sample is reintroduced in the MBE chamber for the growth of the active region of the LED, namely 1.5 mm thick GaN:Si, ten periods of (Ga,In)N/GaN multiple quantum well, 20 nm thick Al 0.1 Ga 0.9 N:Mg, and 200 nm thick GaN:Mg. As we use MBE, there is no need for thermal annealing to activate the acceptor behavior of Mg atoms [9,10]. A cross-section of the full structure, obtained by scanning electron microscopy (SEM), is shown in Fig.…”

Section: Epitaxial Growthmentioning

confidence: 99%

Growth of nitride‐based light emitting diodes with a high‐reflectivity distributed Bragg reflector on mesa‐patterned silicon substrate

Damilano

Brochen

Brault

et al. 2015

Physica Status Solidi (a)

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This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.(Ga,In)N/GaN multiple quantum well blue light emitting diodes (LEDs) grown on mesa-patterned silicon substrates with improved electro-optic characteristics are demonstrated. The active regions are grown on top of high-reflectivity AlN/(Al,Ga)N distributed Bragg reflectors (DBRs). Due to efficient stress relaxation at the mesa edges, crack formation during growth or upon the post-growth coolingdown of the samples can be avoided. A large number of AlN/(Al,Ga)N bilayers in the DBR can be then included in the LED structures leading to strong enhancement of the LED device output power in spite of the presence of the absorbing silicon substrate at the LED emission wavelength.Photograph of a blue light emitting diode (I ¼ 20 mA) grown on top of a high reflectivity distributed Bragg reflector on a mesa-patterned silicon substrate.

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Erratum: “Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy” [Appl. Phys. Lett. 103, 032102 (2013)]

Cited by 11 publications

References 1 publication

Locally‐Strain‐Induced Heavy‐Hole‐Band Splitting Observed in Mobility Spectrum of p‐Type InAs Grown on GaAs

Locally‐Strain‐Induced Heavy‐Hole‐Band Splitting Observed in Mobility Spectrum of p‐Type InAs Grown on GaAs

Effect of oxygen impurities in semipolar III‐nitride light emitting diodes

Growth of nitride‐based light emitting diodes with a high‐reflectivity distributed Bragg reflector on mesa‐patterned silicon substrate

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