ERD analysis and modification of TiO2 thin films with heavy ions

Jensen, Jens; Martin, David; Surpi, Alessandro; Kubart, Tomáš

doi:10.1016/j.nimb.2010.02.051

Cited by 50 publications

(32 citation statements)

References 39 publications

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“…The elemental composition of the as-deposited films was obtained by time-of-flight energy elastic recoil detection analysis (ToF-E ERDA) at an accuracy of  5% for Zr and  3% for B. The measurements were carried out with a 36 MeV 127 I 8+ ion beam using the set-up at Uppsala University [24,25]. The incident angle of primary ions and exit angle of recoils were both 67.5 ° to the sample surface normal giving a recoil angle of 45 °.…”

Section: Methodsmentioning

confidence: 99%

Direct current magnetron sputtered ZrB2 thin films on 4H-SiC(0001) and Si(100)

et al. 2014

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Section: Methodsmentioning

confidence: 99%

Direct current magnetron sputtered ZrB2 thin films on 4H-SiC(0001) and Si(100)

et al. 2014

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“…The ion incident angle relative to the surface normal was 67.5° and the detector was positioned at a recoil angle of 45°. A detailed description of the experimental set-up has been given elsewhere [23,24]. A reference sample with known H content was used for calibration of the data.…”

Section: A General Experimental Proceduresmentioning

confidence: 99%

Principles for designing sputtering-based strategies for high-rate synthesis of dense and hard hydrogenated amorphous carbon thin films

Aijaz¹,

Sarakinos²,

Raza³

et al. 2014

Diamond and Related Materials

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Principles for designing sputtering-based strategies for high-rate synthesis of dense and hard hydrogenated amorphous carbon thin films, Diamond and related materials, 2014. 44, pp.117-122. http AbstractIn the present study we contribute to the understanding that is required for designing sputtering-based routes for high rate synthesis of hard and dense hydrogenated amorphous carbon (a-C:H) films. We compile and implement a strategy for synthesis of a-C:H thin films that entails coupling a hydrocarbon gas (acetylene) with high density discharges generated by the superposition of high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS). Appropriate control of discharge density (by tuning HiPIMS/DCMS power ratio), gas phase composition and energy of the ionized depositing species leads to a route capable of providing ten-fold increase in the deposition rate of a-C film growth compared to HiPIMS Ar discharge (Aijaz et al. Diamond and Related Materials 23 (2012) 1). This is achieved without significant incorporation of H (< 10 %) and with relatively high hardness (> 25 GPa) and mass density (~2.32 g/cm 3 ). Using our experimental data together with Monte-Carlo computer simulations and data from the literature we suggest that: (i) dissociative reactions triggered by the interactions of energetic discharge electrons with hydrocarbon gas molecules is an important additional (to the sputtering cathode) source of film forming species and (ii) film microstructure and film hydrogen content are primarily controlled by interactions of energetic plasma species with surface and sub-surface layers of the growing film.

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“…36 MeV 127 I 8+ ions were used as projectiles with the incident angle set to 67.5° with respect to the surface normal and a recoil angle of 45° [23]. The recoil ToF-E ERDA spectra were analyzed using the CONTES code [24], where the measured recoil energy spectrum of each element was converted to relative atomic concentration, providing an error margin of ±1.5 at.% for the reported elemental compositions.…”

Section: Methodsmentioning

confidence: 99%