Erbium point defects in silicon

Needels, M.; Schlüter, M.; Lannoo, M.

doi:10.1103/physrevb.47.15533

Cited by 94 publications

(58 citation statements)

References 9 publications

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“…We have therefore performed Rutherford backscattering spectrometry/ channeling measurements on these samples and we can exclude the possibility that Er is residing on a substitutional site. It is interesting to note that theoretical calculations by Needels et al 25 have identified the tetrahedral interstitial site for Er in Si as the most energetically favorable position ͑apart from the erbium silicide͒. These calculations, however, were performed for Er incorporated into pure silicon with no extra impurity.…”

Section: Hϭ B B-g-s ͑1͒mentioning

confidence: 99%

Electron paramagnetic resonance of erbium doped silicon

Carey

Donegan

Barklie

et al. 1996

Applied Physics Letters

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Electron paramagnetic resonance measurements have been made on samples of float zone silicon, implanted with 10 15 Er/cm 2 . One sample was coimplanted with oxygen to give an impurity concentration of 10 20 O/cm 3 and 10 19 Er/cm 3 . In this coimplanted sample, sharp lines are observed which are identified as arising from a single spin 1/2 Er 3ϩ center having a g tensor exhibiting monoclinic C 1h symmetry. The principal g values and tilt angle are g 1 ϭ0.80, g 2 ϭ5.45, g 3 ϭ12.60, and ϭ2.6°. In the absence of O, the sharp lines are not observed. No Er 3ϩ cubic centers were detected in either sample. Possible structures for the center are discussed. © 1996 American Institute of Physics. ͓S0003-6951͑96͒02051-7͔Rare-earth doped semiconductors have attracted a great deal of attention because of their possible applications in optoelectronics. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] The sharp intra 4 f shell transitions, which result from the 4 f electrons being shielded from the full effect of the crystal field, give rise to emissions which are largely independent of the surrounding environment. These emissions can be electrically excited which is important for device applications. Erbium doped silicon has attracted particular attention because the Er 3ϩ transition 4 I 13/2 → 4 I 15/2 at 1.54 m matches the minimum in the absorption of silica-based optical fibers. One of the major problems hampering future applications of Si:Er in optoelectronics is the strong quenching behavior of both the photo 2 -and electroluminescence 1 on going from 77 K to room temperature ͑RT͒. It has now been shown that the incorporation of other impurities, notably oxygen, can significantly increase the luminescence intensity 2 and help to suppress the temperature quenching of the luminescence. 5 Recently 7-9 RT electroluminescence has also been obtained from Er-doped Si p-n diodes codoped with either O or F. Furthermore, it has been shown that, in spite of the low solid solubility 10 of Er in Si (ϳ2ϫ10 16 /cm 3 at 900°C͒ higher Er concentrations ͑up to ϳ10 20 /cm 3 ) can be incorporated by chemical vapor deposition, 11 molecular beam epitaxy, 12 or by using the solid phase epitaxial regrowth of an amorphous layer produced by Er implantation. 13 Codoping with O or F allows the suppression of Er segregation at the moving crystal-amorphous interface and the regrowth of thick (ϳ2 m͒ recrystallized layers. 14 All of these beneficial effects have been attributed 6 to modifications in the local environment of Er produced by the codopants. Although strong evidence of the modifications of the electrical properties of Er in Si in the presence of O ͑or F) has been provided, 4,15,16 there is little experimental information on how the site location and coordination of Er in Si is altered by the presence of other impurities.In this letter, we report on the first electron paramagnetic resonance ͑EPR͒ measurements made on Er implanted float zone ͑FZ͒ Si coimplanted with O. We show that the presence of oxygen has a pronounced effect on the type of E...

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Section: Hϭ B B-g-s ͑1͒mentioning

confidence: 99%

Electron paramagnetic resonance of erbium doped silicon

Carey

Donegan

Barklie

et al. 1996

Applied Physics Letters

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“…It is interesting to note that the value of x and W obtained in our analysis are almost identical to those obtained by Przybylinska et al 18 in their study of Er-implanted Si and is consistent with the energy level calculation that found the tetrahedral interstitial site to be the most stable for Er to occupy in Si. 29 These calculations were performed for Er incorporated into pure silicon with no extra impurity present. Furthermore Wahl et al 30 have recently experimentally demonstrated, by the emission channeling technique, that Er is in a tetrahedral interstitial site in float zone Si.…”

Section: A Effects Of Different O Concentrations On Epr and Pl Spectramentioning

confidence: 99%

Electron paramagnetic resonance and photoluminescence study of Er-impurity complexes in Si

et al. 1999

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Electron paramagnetic resonance ͑EPR͒ and photoluminescence ͑PL͒ spectroscopy have been used to examine the structure and optical properties of erbium-impurity complexes formed in float-zone Si by multipleenergy implants at 77 K of Er together with either O or F. After implantation a 2-m-thick amorphous layer was formed containing an almost uniform concentration of Er (10 19 /cm 3 )and O (3ϫ10 19 /cm 3 or 10 20 /cm 3 ) or F (10 20 /cm 3 ). Samples were annealed in nitrogen at 450°C for 30 min ͑treatment A͒, treatment Aϩ620°C for 3 h ͑treatment B͒, treatment Bϩ900°C for 30 s ͑treatment C͒ or treatment Bϩ900°C for 30 min ͑treatment D͒. Samples coimplanted to have 3ϫ10 19 O/cm 3 and subject to treatment C show a broad line anisotropic EPR spectrum. These samples have the most intense low-temperature PL spectrum containing several sharp peaks attributed to Er 3ϩ in sites with predominantly cubic T d symmetry. Increasing the O concentration to 10 20 /cm 3 produces sharp line EPR spectra the strongest of which are attributed to two Er 3ϩ centers having monoclinic C 1h and trigonal symmetry. The principal g values and tilt angle for the monoclinic centers are g 1 ϭ0.80, g 2 ϭ5.45, g 3 ϭ12.60, ϭ57.3°, g ʈ ϭ0.69, and g Ќ ϭ3.24 for the trigonal centers. The low-temperature PL spectrum from this sample showed additional sharp lines but the total intensity is reduced when compared to the sample with 3ϫ10 19 O/cm 3 . For the sample containing 10 20 O/cm 3 at least four distinct centers are observed by EPR after treatment B but after treatment D no EPR spectrum is observed. The PL spectra are also observed to change depending on the specific anneal treatment but even after treatment D, Er-related PL is still observed. Samples containing 10 20 F/cm 3 and annealed with either treatment B or C produced an EPR spectrum attributed to Er 3ϩ in a site of monoclinic C 1h symmetry with g 1 ϭ1.36, g 2 ϭ9.65, g 3 ϭ7.91, and ϭ79.1°.Tentative models for the structures of Er-impurity complexes are presented and the relationship between the EPR-active and PL-active centers is discussed. ͓S0163-1829͑99͒04503-8͔

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“…One of the reasons for difficulties in obtaining the Er 3 +-PL at RT is the low level of probability of Er excitation via recombination of free carriers, as has been theoretically explained by Needles et al [8].…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence From Er⁻ Implanted 4h And 6h-SiC

Uekusa

Goto

2001

MRS Proc.

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Erbium (Er) ions were implanted into 4H and 6H silicon carbide (SiC). The temperature-dependent photoluminescence (PL) and PL lifetime were characterized. The optimum annealing temperature for SiC : Er were 1600 °C. PL intensity decreased at 1700 'C, and the bandedge luminescence changed in relation to the luminescence of Er 3 ÷. Thermal quenching of the luminescence of Er3+ was suppressed by using SiC with a wide band gap as a host material. The Er9+ -PL was observed at room temperature (RT). We monitored the auger effect that is believed to be the main cause of the thermal quenching process and concluded that, in the temperature range 15 K to 70 K, the thermal quenching process has a close relation to nonradiative recombination from the first excited state (411/2) to the ground state (41j5O of Er 3 +.

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Erbium point defects in silicon

Cited by 94 publications

References 9 publications

Electron paramagnetic resonance of erbium doped silicon

Electron paramagnetic resonance of erbium doped silicon

Electron paramagnetic resonance and photoluminescence study of Er-impurity complexes in Si

Photoluminescence From Er⁻ Implanted 4h And 6h-SiC

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Erbium point defects in silicon

Cited by 94 publications

References 9 publications

Electron paramagnetic resonance of erbium doped silicon

Electron paramagnetic resonance of erbium doped silicon

Electron paramagnetic resonance and photoluminescence study of Er-impurity complexes in Si

Photoluminescence From Er− Implanted 4h And 6h-SiC

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Photoluminescence From Er⁻ Implanted 4h And 6h-SiC