Photoluminescence From Er⁻ Implanted 4h And 6h-SiC

Abstract

Erbium (Er) ions were implanted into 4H and 6H silicon carbide (SiC). The temperature-dependent photoluminescence (PL) and PL lifetime were characterized. The optimum annealing temperature for SiC : Er were 1600 °C. PL intensity decreased at 1700 'C, and the bandedge luminescence changed in relation to the luminescence of Er 3 ÷. Thermal quenching of the luminescence of Er3+ was suppressed by using SiC with a wide band gap as a host material. The Er9+ -PL was observed at room temperature (RT). We monitored the auger effect that is believed to be the main cause of the thermal quenching process and concluded that, in the temperature range 15 K to 70 K, the thermal quenching process has a close relation to nonradiative recombination from the first excited state (411/2) to the ground state (41j5O of Er 3 +.

High-Q suspended optical resonators in 3C silicon carbide obtained by thermal annealing

“…Suspended SiC structures fabricated on standard SiC on Si substrates are compatible with high temperature thermal annealing [41,42]. These are useful for increasing the crystal purity for lowered scattering or absorption losses from imperfect material growth, oxidation-smoothing of sidewalls with oxygen annealing or implantation of ions such as vanadium or rare earths [43].…”

High-Q suspended optical resonators in 3C-SiC obtained by thermal annealing

“…Suspended SiC structures fabricated on standard SiC on Si substrates are compatible with high temperature thermal annealing due to the absence of intermediate layers, as the thermal expansion coefficient of SiC and Si are of the same order in magnitude [8]. This is useful for increasing the crystal purity for lowered scattering or absorption losses from imperfect material growth, oxidation-smoothing of sidewalls with oxygen annealing or implantation of ions such as vanadium or rare earths [9] which are useful for creating optically active emitters or doped optical amplifiers.…”