Erase Mechanism for Copper Oxide Resistive Switching Memory Cells with Nickel Electrode

Memory effect of RF sputtered ZrO2 thin films

“…It was reported that the oxygen content and the oxygen-related defects had great influences on the resistive switching characteristics [2]. Therefore, the bipolar behavior of the Ti/ZrO 2 /Pt device might be attributed to that the Ti served as an oxygen gettering material to induce the oxygen vacancies at the Ti/ZrO 2 interface, which would modify the oxygen vacancies distribution within ZrO 2 memory film bulk further leading to asymmetric trap levels [8]. The detailed mechanism is still under investigation for giving more insight into resistive switching phenomenon.…”

“…Among various NVMs, the RRAM composed of a simple metal-insulator-metal (M-I-M) structure has the merits of low power consumption, high speed operation and high density integration. Due to these excellent characteristics, a number of metal oxides such as SrZrO 3 [1,2], Pr 1-x Ca x MnO 3 [3], ZrO 2 [4], TiO 2 [5,6], Cu x O [7,8], and NiO [9][10][11][12][13][14], have been extensively studied for possible NVM applications.…”

Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

“…For the OxRAM memory elements addressed in this paper, the MIM structure is generally composed of metallic electrodes sandwiching an active layer, usually an oxygen-deficient oxide. A large number of resistive switching oxides, like HfO 2 , Ta 2 O 5 , NiO, TiO 2 or Cu 2 O, are reported in the literature [7][8][9][10]. The Valency Change Mechanism (VCM) occurs in specific transition metal oxides and is triggered by a migration of anions, such as oxygen vacancies.…”

Two-terminal resistive switches (memristors) for memory and logic applications

“…The mechanism can be attributed to a) phase change due to Joule heating in chalcogenide-based phase-change memories [16]; b) conductive filament formation due to Joule heating observed in certain oxides [17,18]; c) conductive filament formation due to electrochemical redox processes observed in binary oxides (e.g. NiO, CuO 2 , TiO 2 ) [19,20], chalcogenides, and polymers [7,21]; d) field-assisted drift/diffusion of ions in amorphous films [22,23]; and e) possible conformational changes in molecules [24,25]. However, understanding the switching mechanism for specific devices has always been a challenging topic, partly due to difficulties in direct material characterizations in these nanoscale devices [7,26] …”