Epitaxially grown ZnO thin films on 6H-SiC(0001) substrates prepared by spin coating-pyrolysis

Jeon, Youn Soo; Kim, Doo-Man; Hwang, Kyu–Seog

doi:10.1016/j.apsusc.2007.02.026

Cited by 8 publications

(1 citation statement)

References 14 publications

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“…Si-based photodetectors have limitations such as lower efficiency and low-energy cut-off filters are often required [1][2]. To avoid these limitations, UV detectors based on wide bandgap semiconductors have been studied [3][4]. In addition, the wide bandgap materials are chemically and thermally stable, which is an advantage for devices operating in harsh environments [5].…”

Section: Introductionmentioning

confidence: 99%

Effects of Substrate Temperature on the Electrical and the Optical Properties of N-Type ZnO/P-Type 4H-SiC

Kim¹,

Min²,

Moon³

et al. 2012

MSF

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We investigated the effect of the substrate temperature on the electrical and the optical properties of ZnO/4H-SiC structures. The n-type ZnO layer was grown on p-type 4H-SiC substrate by pulsed laser deposition to form p-n hetero-junction diode structure. The n-type ZnO thin films were deposited by pulsed laser deposition at different temperatures of 200, 400, and 600 °C, respectively. It was shown from transmission line method (TLM) and auger electron spectroscopy (AES) data that the sheet resistance of ZnO on SiC was increases from ~760 Ω/square to ~4000 Ω/square as the deposition temperature increases and the oxygen outdiffusion decreases. The I-V characteristics with and without illumination has also been studied.

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