A new plasma process for fabricating impurity-free zinc oxide films and/or nanoparticles using diethyl zinc (DEZn) and negative oxygen (O % ) plasmas at low temperatures has been proposed. To test it experimentally, a prototype apparatus has been developed. For the O % source, an intermittent discharge with 13.56 MHz radio frequency is employed. As the Zn precursor, DEZn is successfully transported to a reactor chamber without using any carrier gas. Initial results obtained using the developed apparatus are also discussed.