Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition

Stoner, Brian R.; Ma, Guofu; Wolter, Scott D.; Zhu, Wei; Wang, Y.-C.; Davis, R. F.; Glass, Jeffrey T.

doi:10.1016/0925-9635(93)90045-4

Cited by 96 publications

(13 citation statements)

References 6 publications

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“…By BEN pretreatment via HF-CVD, higher nucleation density and highly oriented diamond particles have been grown on the (000 1) face of single crystal 6H-SiC substrates. Jiang et al 13 and Stoner et al 14 have suggested some mechanisms for negative bias nucleation. Our experimental results revealed that the substrate surfaces were etched by the reactive hydrogen species, and diamonds nucleated on these etched surface.…”

Section: Resultsmentioning

confidence: 97%

Growth of oriented diamond film on single crystalline 6H-SiC substrates

Hayashi

Lilov

et al. 1998

Journal of Elec Materi

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Section: Resultsmentioning

confidence: 97%

Growth of oriented diamond film on single crystalline 6H-SiC substrates

Hayashi

Lilov

et al. 1998

Journal of Elec Materi

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“…Typical deposition parameters for the ion-assisted pretreatment as well as unbiased MPCVD diamond growth are listed in Table I. 25,26 Note that conditions for ion-assisted diamond nucleation are generally not the same as those optimized for unbiased high-quality diamond growth; extension of the bias process beyond the nucleation stage generally leads to poorer quality diamond films and no growth rate enhancement.…”

Section: Methodsmentioning

confidence: 99%

“…11 Ions from the plasma which bombarded the electrically isolated substrate had at least an order of magnitude less energy than those incident on the negatively biased regions due to the 200 -300 V difference in the potential drop across the respective sheaths. 5,7,8,25 However, optical emission spectroscopy (OES) in the near-surface region by Shigesato et al, which showed modest increases in the H • concentration and electron temperature under bias conditions, 7 or those by Beckmann et al, which showed a slight decrease in the H • concentration at higher bias voltage, 10 do not strongly support a chemical mechanism. We believe this nucleation enhancement is controlled by ion bombardment rather than chemical effects.…”

Section: A Effects Of Substrate Bias Voltage Temperature and Carbomentioning

confidence: 99%

“…25,26 It has also been reported that diamond or DLC deposited in close proximity to Si substrates during MPCVD bias pretreatments was required to obtain high bias currents and high nucleation densities in some systems. Increases in bias current attributed to increased electron emission for diamond films as compared to the substrate material have been previously observed.…”

Section: Substrate Bias Current and Electron Emission Effectsmentioning

confidence: 99%

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Insights into the ion-assisted nucleation of diamond on silicon

1997

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The ion-assisted nucleation of diamond was studied in a microwave plasma chemical vapor deposition system to gain insights into the processes controlling this phenomenon. The dependence of the nucleation density on bias voltage and temperature, as well as experiments with an electrically isolated substrate, are consistent with an ion bombardment mechanism for diamond nucleation. However, the growth of these nuclei is dominated by neutral species rather than ions. Measurements of the bias current under various conditions also provide details on the roles of the incident ion flux and substrate electron emission during this process. Furthermore, Monte Carlo simulations of the ion energy distribution at the substrate are compared to experimental measurements. Preferential sputtering, thermal spike, and carbon subplantation nucleation mechanisms are assessed based on the experimental and modeling results.3354

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“…2 Stoner and Glass also demonstrated that locally epitaxial diamond films could be successfully obtained on ␤-SiC. 3,4 Jiang and Klages first reported heteroepitaxial growth diamond on Si by negative BEN. 5 Since then, the negative BEN method in MPCVD has been widely used to obtain heteroepitaxial diamond films on various substrates by many researchers.…”

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confidence: 99%

Highly oriented diamond growth on positively biased Si substrates

Chang¹,

Chang²

2001

J. Mater. Res.

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Deposition of highly textured diamond films on Si(001) has been achieved by using positively bias-enhanced nucleation in microwave plasma chemical vapor deposition. During the biasing period, an additional glow discharge due to the dc plasma effect appeared between the electrode and the substrate. The discharge is necessary for enhanced nucleation of diamond. X-ray diffraction, scanning electron microscopy, and cross-sectional transmission electron microscopy (XTEM) were used to characterize the microstructure of the diamond films on Si. The results show the morphology of diamond grains in square shape with strong diamond (001) texture. XTEM reveals that an amorphous interlayer formed on the smooth Si surface before diamond nucleation.

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Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition

Cited by 96 publications

References 6 publications

Growth of oriented diamond film on single crystalline 6H-SiC substrates

Growth of oriented diamond film on single crystalline 6H-SiC substrates

Insights into the ion-assisted nucleation of diamond on silicon

Highly oriented diamond growth on positively biased Si substrates

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