Epitaxial growth of the topological insulator Bi2Se3 on Si(111): Growth mode, lattice parameter, and strain state

Vyshnepolsky, Michael; Klein, C.; Klasing, F.; Hanisch-Blicharski, Anja; Hoegen, M. Horn‐von

doi:10.1063/1.4821181

Cited by 21 publications

(19 citation statements)

References 27 publications

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“…The fact that the (in-plane) lattice constant of sub-QL Bi 2 Se 3 on graphene is the same as that of the bulk crystal suggests that single QL clusters or islands has the same equilibrium lattice constant as the bulk crystal. This appears inconsistent with a recent report of an intrinsically enlarged lattice constant of ultrathin Bi 2 Se 3 layer grown on Si, 11 reflecting possibly a substrate effect. The observed lattice stretching of Bi 2 Se 3 on GaN can, on the other hand, be attributed to the constraint of the substrate lattice due to a strong heterointerface interaction.…”

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confidence: 99%

“…This finding improves the current understanding of strain in epitaxial Bi 2 Se 3 layers. 11,12 As strain in a TI can effectively modify the topological states, [13][14][15] an experimental study of strain in TI is fundamentally interesting and practically important for application purposes. Bi 2 Se 3 was deposited in a customized Omicron MBE reactor 16 from elemental Bismuth (Bi) and Selenium (Se) sources in the Knudsen cells.…”

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Strain in epitaxial Bi2Se3 grown on GaN and graphene substrates: A reflection high-energy electron diffraction study

Guo

et al. 2015

Applied Physics Letters

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Topological insulator (TI) has been one of the focus research themes in condensed matter physics in recent years. Due to the relatively large energy bandgap, Bi2Se3 has been identified as one of the most promising three-dimensional TIs with application potentials. Epitaxial Bi2Se3 by molecular-beam epitaxy has been reported by many groups using different substrates. A common feature is that Bi2Se3 grows readily along the c-axis direction irrespective of the type and condition of the substrate. Because of the weak van deer Waals interaction between Bi2Se3 quintuple layers, the grown films are reported to be strain-free, taking the lattice constant of the bulk crystal. At the very initial stage of Bi2Se3 deposition, however, strain may still exist depending on the substrate. Strain may bring some drastic effects to the properties of the TIs and so achieving strained TIs can be of great fundamental interests as well as practical relevance. In this work, we employ reflection high-energy electron diffraction to follow the lattice constant evolution of Bi2Se3 during initial stage depositions on GaN and graphene, two very different substrates. We reveal that epitaxial Bi2Se3 is tensile strained on GaN but strain-free on graphene. Strain relaxation on GaN is gradual.

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confidence: 99%

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confidence: 99%

Strain in epitaxial Bi2Se3 grown on GaN and graphene substrates: A reflection high-energy electron diffraction study

Guo

et al. 2015

Applied Physics Letters

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“…Angle-resolved photoelectron spectroscopy (ARPES) and conductivity measurements in the Bi 2 Te 3 thin films deposited on Si(111) [40,41], InP [42], GaAs [43], and Al 2 O 3 [44] [23] clearly demonstrated that the band bending appearing in the TI film leads to substantial separation of the probability maxima and energy spectra of the surface (TSS) and interfacial (TIS and/or OIS) quasiparticles. Unfortunately, detailed study of the interfacial electron states in this system, which requires separation of TIS and OIS contributions, has not been performed yet.…”

Section: Discussionmentioning

confidence: 99%

Band bending driven evolution of the bound electron states at the interface between a three-dimensional topological insulator and a three-dimensional normal insulator

et al. 2015

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In the frame of k · p method and variational approach for the effective energy functional of a contact between a three-dimensional topological insulator (TI) and normal insulator (NI), we analytically describe the formation of interfacial bound electron states of two types (ordinary and topological) having different spatial distributions and energy spectra. We show that these states appear as a result of the interplay of two factors: hybridization and band bending of the TI and NI electron states near the TI/NI boundary. These results are corroborated by the density functional theory calculations for the exemplar Bi 2 Se 3 /ZnSe system.

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“…47 Since the weak van der Waals interactions in layered structures reduce the bonding between the sample and the substrate, the strain induced in this way is only about 3%. 48,49 Even though large strain around 20% can be obtained in some rare cases, 50 it is often localized at the atomic scale and could impede electron transport. Therefore, new experimental techniques may be needed to achieve the strong biaxial strain to observe the normal-to-topological transition in -GaSe.…”

Section: Releasing the Fixed Volume Assumptionmentioning

confidence: 99%

Systematic investigation on topological properties of layered GaS and GaSe under strain

Jiang

et al. 2014

The Journal of Chemical Physics

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The topological properties of layered β-GaS and ε-GaSe under strain are systematically investigated by ab initio calculations with the electronic exchange-correlation interactions treated beyond the generalized gradient approximation (GGA). Based on the GW method and the Tran-Blaha modified Becke-Johnson potential approach, we find that while ε-GaSe can be strain-engineered to become a topological insulator, β-GaS remains a trivial one even under strong strain, which is different from the prediction based on GGA. The reliability of the fixed volume assumption rooted in nearly all the previous calculations is discussed. By comparing to strain calculations with optimized inter-layer distance, we find that the fixed volume assumption is qualitatively valid for β-GaS and ε-GaSe, but there are quantitative differences between the results from the fixed volume treatment and those from more realistic treatments. This work indicates that it is risky to use theoretical approaches like GGA that suffer from the band gap problem to address physical properties, including, in particular, the topological nature of band structures, for which the band gap plays a crucial role. In the latter case, careful calibration against more reliable methods like the GW approach is strongly recommended.

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Epitaxial growth of the topological insulator Bi2Se3 on Si(111): Growth mode, lattice parameter, and strain state

Cited by 21 publications

References 27 publications

Strain in epitaxial Bi2Se3 grown on GaN and graphene substrates: A reflection high-energy electron diffraction study

Strain in epitaxial Bi2Se3 grown on GaN and graphene substrates: A reflection high-energy electron diffraction study

Band bending driven evolution of the bound electron states at the interface between a three-dimensional topological insulator and a three-dimensional normal insulator

Systematic investigation on topological properties of layered GaS and GaSe under strain

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