Epitaxial Growth of PbS Thin Films from Aqueous Solution

Abstract

Chemical deposition of normalPbS from aqueous solutions has been studied using a reaction of normalPbSfalse(NO3)2 and CSfalse(NH2)2 with excess normalNaOH . The growth rate was measured as a function of temperature and concentrations of normalNaOH and CSfalse(NH2)2 using glass substrates. It is found that the incubation time depends on temperature and CSfalse(NH2)2 concentration. Epitaxial growth of normalPbS on Ge(100) and normalInPfalse(100false) substrates is confirmed by means of the Laue back reflection x‐ray and the electron channeling patterns. The best surface morphology is obtained on the epitaxial film grown on normalInPfalse(100false) substrate at 298 K with the concentrations of normalNaOH and CSfalse(NH2)2 at 0.57 and 0.4 M/liter, respectively.

The role of solution composition in chemical bath deposition of epitaxial thin films of PbS on GaAs(100)

“…Only few studies on epitaxial single-crystal PbS films have been reported [10,13]. Isshiki et al [10] showed that increase in CS(NH 2 ) 2 concentration increases the deposition rate [13].…”

“…As can be seen from the following reactions, the chemical process governing the deposition of PbS from alkaline solution is considered to proceed according to the following reactions [10]: …”

“…Hence, in the absence of a complexant a precipitate is rapidly formed and little or no film formation occurs [8]. It has been assumed, by considering reactions (4) and (5), that the deposition rate at a constant temperature should be affected mainly by CS(NH 2 ) 2 and NaOH concentrations [10]. Thus, it is reasonable to assume that NaOH and CS(NH 2 ) 2 concentrations are key parameters which can affect the film morphology through change in active deposition mechanism and corresponding growth rate [6].…”

Electrical, optical and morphological properties of chemically deposited nanostructured HgS–Bi2S3 composite thin films

“…Chemical bath deposition technique proves to be a simple and low-cost method to produce uniform, adherent, and reproducible nanostructured thin films that are useful in development of electronic devices [34][35][36][37][38]. It is a slow process, which facilitates better orientation of crystallites with improved grain structure.…”

Photoconductivity and photoluminescence in chemically deposited films of (Cd0.95-Pb0.05)S: CdCl2,Ce

“…A number of research workers [1][2][3] prepared PbS films using different substrates like dielectrics/ ferroelectrics and semiconducting materials etc. A large number of workers [4][5][6][7] also prepared CdS films by such a technique. Many fold improvements were reported by Nair et al [8] due to preparation under solar assisted condition and by Bhushan and co-workers [6,9] in presence of impurities like lanthanides, since alloying can produce base materials of band gaps lying between the band gaps of starting materials and thus can produce materials of higher photo-response and PL emission in desired parts of visible region.…”