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Zinc sulfide thin films have been deposited onto glass substrates by chemical bath deposition. The various deposition parameters such as volume of sulfide ion source, pH of bath, deposition time, temperature etc are optimized. Thin films of ZnS with different thicknesses of 76-332 nm were prepared by changing the deposition time from 6-20 h at 30°C temperature. The effect of film thickness on structural and electrical properties was studied. The electrical resistivity was decreased from 1⋅ ⋅83 × 10 5 Ω Ω-cm to 0⋅ ⋅363 × 10 5 Ω Ω-cm as film thickness decreased from 332 nm to 76 nm. The structural and activation energy studies support this decrease in the resistivity due to improvement in crystallinity of the films which would increase the charge carrier mobility and decrease in defect levels with increase in the thickness.

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ZnS thin films of different thicknesses were prepared by chemical bath deposition using thiourea and zinc acetate as S 2-and Zn 2+ source. The effect of film thickness on the optical and structural properties was studied. The optical absorption studies in the wavelength range 250-750 nm show that band gap energy of ZnS increases from 3⋅68-4⋅10 eV as thickness varied from 332-76 nm. The structural estimation shows variation in grain size from 6⋅9-17⋅8 nm with thickness. The thermoemf measurement indicates that films prepared by this method are of n-type.