Epitaxial growth of NH3-doped ZnO thin films on 〈〉 oriented sapphire substrates

Wang, Jinzhong; Du, Guotong; Zhao, Bowen; Yang, Xu; Zhang, Yuantao; Ma, Yan; Liu, Dali; Chang, Yuchun; Wang, Haisong; Yang, Hongjun; Yang, Shuren

doi:10.1016/s0022-0248(03)01241-7

Cited by 62 publications

(44 citation statements)

References 5 publications

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“…In support of this scenario, secondary ion mass spectroscopy measurements show that N can be doped to a level of more than 10 19 cm -3 [11], and electron paramagnetic resonance measurements confirm that N substitutes for O, in the ZnO lattice [49,50]. N-doped, p-type ZnO samples have been grown by chemical vapor deposition (CVD) [2], metal-organic CVD (MOCVD) [12,17,21], molecular beam epitaxy (MBE) [11], MOMBE [8], pulsed laser deposition (PLD) [3,5,6,10], and sputtering, both DC [16,20] and RF [15]. Obviously, p-type ZnO is amenable to growth by a variety of techniques.…”

Section: N-doped Znomentioning

confidence: 92%

“…However, this material has largely failed to live up to its potential, because LEDs require both p-type and n-type material, and it has proven too difficult to produce high-conductivity p-type ZnO. Many groups have attacked this problem, and several have been successful, at least to some degree [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21]. Theoreticians have also been active in this area, and have predicted the electrical activities of various dopants and native defects [22][23][24][25][26][27].…”

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confidence: 99%

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P‐type doping and devices based on ZnO

Look

Claflin

2004

Physica Status Solidi (b)

522

293

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Both n‐type and p‐type ZnO will be required for development of homojunction light‐emitting diodes (LEDs) and laser diodes (LDs). It is easy to obtain strong n‐type ZnO, but very difficult to create consistent, reliable, high‐conductivity p‐type material. The most natural choice of an acceptor dopant is N, substituting for O, and indeed several groups have been able to obtain p‐type material by such doping. Surprisingly, however, other groups have also been successful with P and As, elements with much larger ionic radii than that of O. Although ZnO substrates are now available, most of the epitaxial p‐type layers so far have been grown on sapphire, or other poorly‐matched materials. The lowest p‐type resistivity obtained up to now is about 0.5 Ω‐cm, which should be sufficient for LED fabrication. In spite of the present availability of p‐type ZnO, very few homojunction LEDs have been reported so far, to our knowledge; however, several good heterojunction LEDs have been demonstrated, fabricated with p‐type layers composed of other materials. One such structure, with fairly strong 389‐nm emission at 300 K, involves n‐type ZnO and p‐type AlGaN, grown on an SiC substrate. Also, an N+‐ion implanted ZnO layer, deposited by chemical vapor deposition on Al2O3, exhibits 388‐nm emission at 300 K and could be economical to produce. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: N-doped Znomentioning

confidence: 92%

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confidence: 99%

P‐type doping and devices based on ZnO

Look

Claflin

2004

Physica Status Solidi (b)

522

293

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“…Although most of these elements have been tested as dopants, only N, P, and As, have produced low-resistivity ͑Ͻ100 ⍀ cm͒, p-type material, to our knowledge. Several groups have found success with N doping, 10,11,13,14,16,[18][19][20][22][23][24][25]28,29 which is not surprising since the ionic radius of N is about that of O, so that N should be quite soluble as N O . On the other hand, there are only a few reports of p-type ZnO from P 21,27,30 or As 12,26 doping, and almost no reports involving any of the other possible dopants.…”

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confidence: 99%

As-doped p-type ZnO produced by an evaporation∕sputtering process

Renlund¹,

Burgener²,

Sizelove

2004

Applied Physics Letters

277

115

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Strongly p-type ZnO is produced by the following sequence of steps: (1) evaporation of Zn3As2 on a fused-quartz substrate at 350°C; and (2) sputtering of ZnO with substrate held at 450°C. The electrical characteristics include: resistivity of 0.4Ωcm, a mobility of 4cm2∕Vs, and a hole concentration of about 4×1018cm−3. This resistivity is among the best (lowest) ever reported for p-type ZnO. Secondary-ion mass spectroscopic analysis gives an average As concentration about 5×1019cm−3, and a simple one-band fit of the temperature-dependent mobility curve yields an acceptor concentration of about 9×1019cm−3. This is strong evidence that the p-type dopant involves As, although it is not clear whether the acceptor is simply AsO or the recently suggested AsZn−2VZn.

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“…Wang  . 25 suggested that optimum NH 3 flux in the MOCVD chamber was required to dope nitrogen effectively in the ZnO lattice. Nitrogen doping decreased with enriching the amount of NH 3 in the chamber.…”

Section: Introductionmentioning

confidence: 99%

ZnO-based Solid Solutions for Visible Light Driven Photocatalysis

Mapa

Rajaambal

Gopinath

2013

Trans. Mat. Res. Soc. Japan

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Water splitting to produce hydrogen using abundantly available solar energy and water is a process of utmost importance and urgently required due to exponentially increasing global energy requirement, overconsumption and drying up of fossil fuels, as well as economic and environmental issues. Although first water splitting experiment with UV light was demonstrated on ntype TiO 2 anode and Pt cathode in a photoelectrochemical cell on 1972 by Fujishima and Honda, there is no breakthrough results reported yet in terms of quantum efficiency more than 10% in visible light and sustainable activity without any sacrificial agent. Especially, catalysts that work with visible light and high efficiency are scarce, although many materials work efficiently in UV light. Nonetheless, there is some progress in this area in the last ten years, after the discovery of anion doping in semiconductor oxides. Especially, solid solution between an oxide and either nitride are emerging as promising materials. Present mini review is restricted to the above class of materials, which show electronic structural changes play a significant role in reducing the band gap to induce visible light absorption. Above solid solutions also demonstrate significant visible light driven photocatalytic activity and exhibiting high potential towards that.

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Epitaxial growth of NH3-doped ZnO thin films on 〈〉 oriented sapphire substrates

Cited by 62 publications

References 5 publications

P‐type doping and devices based on ZnO

P‐type doping and devices based on ZnO

As-doped p-type ZnO produced by an evaporation∕sputtering process

ZnO-based Solid Solutions for Visible Light Driven Photocatalysis

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