Epitaxial growth of MgO on GaAs(001) for growing epitaxial BaTiO3 thin films by pulsed laser deposition

Nashimoto, Keiichi; Fork, D. K.; Geballe, T. H.

doi:10.1063/1.107404

Cited by 171 publications

(51 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The lattice constant of MgO is 0.421 nm and its refractive index and dielectric constant are 1.736 and 10 respectively. Magnesium oxide seems to be a good candidate regarding its bulk properties: large band gap (7.8 eV), high thermal conductivity and stability and an alternative dielectric to silicon dioxide (SiO 2 ) to reduce the electric field in capacitive networks [1]. MgO, widely used as a substrate for high-temperature superconductor films deposition, has attracted much attention due to its low dielectric constant, low dielectric loss, and less mismatch with YBCO films [2].…”

Section: Introductionmentioning

confidence: 99%

Spray pyrolysis deposition and characterization of highly (100) oriented magnesium oxide thin films

Raj¹,

Nehru

Jayachandran

et al. 2007

Cryst. Res. Technol.

View full text Add to dashboard Cite

Transparent dielectric thin films of MgO has been deposited on quartz substrates at different temperatures between 400 and 600°C by a pneumatic spray pyrolysis technique using Mg(CH 3 COO) 2 .4H 2 O as a single molecular precursor. The thermal behavior of the precursor magnesium acetate is described in the results of thermogravimetry analysis (TGA) and differential thermal analysis (DTA). The prepared films are reproducible, adherent to the substrate, pinhole free and uniform. Amongst the different spray process parameters, the substrate temperature effect has been optimized for obtaining single crystalline and transparent MgO thin films. The films crystallize in a cubic structure and X-ray diffraction measurements have shown that the polycrystalline MgO films prepared at 500°C with (100) and (110) orientations are changed to (100) preferred orientation at 600°C. The MgO phase formation was also confirmed with the recorded Fourier Transform Infrared (FTIR) results. The films deposited at 600°C exhibited highest optical transmittivity (>80%) and the direct band gap energy was found to vary from 4.50 to 5.25 eV with a rise in substrate temperature from 500 to 600°C. The measured sheet resistance and the resistivity of the film prepared at 600°C were respectively 10 13 Ω/□ and 2.06x107 Ω cm. The surface morphology of the prepared MgO thin films was examined by atomic force microscopy.

show abstract

Section: Introductionmentioning

confidence: 99%

Spray pyrolysis deposition and characterization of highly (100) oriented magnesium oxide thin films

Raj¹,

Nehru

Jayachandran

et al. 2007

Cryst. Res. Technol.

View full text Add to dashboard Cite

show abstract

“…On the other hand, MgO single crystal is a popular substrate for preparing ferroelectric thin film because of its low dielectric constant (k' = 9.65) [4], low optical refractive index (n = 1.736) [5], and especially a lattice constant of 4.213 ,~ which is close to several important perovskite ferroelectrics [6,7]. Recently, MgO thin films have been increasely noted for their potential advantages as a chemically stable buffer layer for high temperature superconductor applications [8][9][10][11]. The buffer layer acts as a diffusion barrier between the superconducting film and the substrate at the annealing or grain-growth temperature [12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

“…Most of the MgO films reported in the literatures were prepared by vacuum deposition methods such as pulsed laser deposition [8][9][10], pulsed-molecularbeam evaporation [16], sputtering [11,17,18], and other reactive evaporations [19][20][21][22], etc. A recent paper by Yoon et al disclosed that the (111) oriented MgO film on Si substrate was prepared by spincoating sol-gel method, using magnesium ethoxide as the starting material [23].…”

Section: Introductionmentioning

confidence: 99%

Electrical and optical properties of MgO thin film prepared by sol-gel technique

Mackenzie

1997

J Sol-Gel Sci Technol

View full text Add to dashboard Cite

Abstract. MgO thin films with either (111) or (200) preferential orientation have been prepared on (100) Si substrates by sol-gel method after a heat-treatment at 800~ The obtained (111) preferentially oriented MgO film has a dielectric constant of 7.0 with a loss factor of 5% and a dielectric strength higher than 8 • 105 V/cm. The optical refractive index, which depends on the film thickness, is 1.71 when the film thickness is 260 nm. The surface structure of the Si substrate is believed to affect the preferential orientation of the sol-gel derived MgO film. Specifically, the microstructures at the interface indicate an interdiffusion of Mg, O, and Si between the film and the substrate.

show abstract

“…MgO has long been used as buffer layer for superconducting and ferroelectric materials, so its growth over different materials such as sapphire [15], Si [16] and GaAs [17] is well established. On the other hand, due to its application as transparent conducting oxide in solar cells or flat-plane displays, CdO has usually been deposited as polycrystalline films onto glass and Si substrates.…”

Section: Introductionmentioning

confidence: 99%

X‐ray characterization of CdO thin films grown on a ‐, c ‐, r ‐ and m ‐plane sapphire by metalorganic vapour phase‐epitaxy

Zúñiga‐Pérez

Martı́nez-Tomás

Muñoz‐Sanjosé

2005

phys. stat. sol. (c)

View full text Add to dashboard Cite

. Ct, 81.05.Dz, 81.15.Gh CdO thin films have been grown on a-plane (11 2 0), c-plane (0001), r-plane (01 1 2) and m-plane (10 1 0) sapphire substrates by metalorganic vapour-phase epitaxy (MOVPE). The effects of different substrate orientations on the structural properties of the films have been analyzed by means of X-ray diffraction, including θ-2θ scans, pole figures and rocking curves. (111), (001) and (110) orientations are found on a-, r-, and m-sapphire respectively, while films deposited on c-plane exhibit an orientation in which no low-index crystal plane is parallel to the sample surface. The recorded pole figures have allowed determining the epitaxial relationships between films and substrates, as well as the presence or absence of extended defects. The rocking curves indicate that high quality thin films, in terms of tilt and twist, can be obtained on r-, c-and m-plane sapphire, while further improvement is needed over the a-orientation.

show abstract

Epitaxial growth of MgO on GaAs(001) for growing epitaxial BaTiO3 thin films by pulsed laser deposition

Cited by 171 publications

References 17 publications

Spray pyrolysis deposition and characterization of highly (100) oriented magnesium oxide thin films

Spray pyrolysis deposition and characterization of highly (100) oriented magnesium oxide thin films

Electrical and optical properties of MgO thin film prepared by sol-gel technique

X‐ray characterization of CdO thin films grown on a ‐, c ‐, r ‐ and m ‐plane sapphire by metalorganic vapour phase‐epitaxy

Contact Info

Product

Resources

About