Mixed halide perovskites are one of the promising candidates in developing solar cells and light-emitting diodes (LEDs), among other applications, because of their tunable optical properties. Nonetheless, photoinduced phase segregation, by formation of segregated Br-rich and I-rich domains, limits the overall applicability. We tracked the phase segregation with increasing crystalline size of CsPbBr3–xIx and their photoluminescence under continuous-wave laser irradiation (405 nm, 10 mW cm–2) and observed the occurrence of the phase segregation from the threshold size of 46 ± 7 nm. These results have an outstanding agreement with the diffusion length (45.8 nm) calculated also experimentally from the emission lifetime and segregation rates. Furthermore, through Kelvin probe force microscopy, we confirmed the correlation between the phase segregation and the reversible halide ion migration among grain centers and boundaries. These results open a way to achieve segregation-free mixed halide perovskites and improve their performances in optoelectronic devices.

The structural and vibrational properties of bismuth selenide (Bi 2 Se 3 ) have been studied by means of x-ray diffraction and Raman scattering measurements up to 20 and 30 GPa, respectively. The measurements have been complemented with ab initio total-energy and lattice dynamics calculations. Our experimental results evidence a phase transition from the low-pressure rhombohedral (R-3m) phase (α-Bi 2 Se 3 ) with sixfold coordination for Bi to a monoclinic C2/m structure (β-Bi 2 Se 3 ) with sevenfold coordination for Bi above 10 GPa. The equation of state and the pressure dependence of the lattice parameters and volume of α and β phases of Bi 2 Se 3 are reported. Furthermore, the presence of a pressure-induced electronic topological phase transition in α-Bi 2 Se 3 is discussed. Raman measurements evidence that Bi 2 Se 3 undergoes two additional phase transitions around 20 and 28 GPa, likely toward a monoclinic C2/c and a disordered body-centered cubic structure with 8-fold and 9-or 10-fold coordination, respectively. These two high-pressure structures are the same as those recently found at high pressures in Bi 2 Te 3 and Sb 2 Te 3 . On pressure release, Bi 2 Se 3 reverts to the original rhombohedral phase after considerable hysteresis. Symmetries, frequencies, and pressure coefficients of the Raman and infrared modes in the different phases are reported and discussed.

The bandgap and band-edge effective mass of single crystal cadmium oxide, epitaxially grown by metal-organic vapor-phase epitaxy, are determined from infrared reflectivity, ultraviolet/visible absorption, and Hall effect measurements. Analysis and simulation of the optical data, including effects of band nonparabolicity, Moss-Burstein band filling and bandgap renormalization, reveal room temperature bandgap and band-edge effective mass values of 2.16± 0.02 eV and 0.21± 0.01m 0 respectively.

The valence-band density of states of single-crystalline rock-salt CdO͑001͒, wurtzite c-plane ZnO, and rocksalt MgO͑001͒ are investigated by high-resolution x-ray photoemission spectroscopy. A classic two-peak structure is observed in the VB-DOS due to the anion 2p-dominated valence bands. Good agreement is found between the experimental results and quasi-particle-corrected density-functional theory calculations. Occupied shallow semicore d levels are observed in CdO and ZnO. While these exhibit similar spectral features to the calculations, they occur at slightly higher binding energies, determined as 8.8 eV and 7.3 eV below the valence band maximum in CdO and ZnO, respectively. The implications of these on the electronic structure are discussed.

Spectrum of -Bi 2 Te 3 at 13.3 GPa and the corresponding fit of Voigt profiles corresponding to the Raman-active modes of the C2/m structure.

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An energy gap between the valence and the conduction band is the defining property of a semiconductor, and the gap size plays a crucial role in the design of semiconductor devices. We show that the presence of a two-dimensional electron gas near to the surface of a semiconductor can significantly alter the size of its band gap through many-body effects caused by its high electron density, resulting in a surface band gap that is much smaller than that in the bulk. Apart from reconciling a number of disparate previous experimental findings, the results suggest an entirely new route to spatially inhomogeneous band-gap engineering.

Within the most mesmerizing materials in the world of optoelectronics, mixed halide perovskites (MHP) have been distinguished due to the tunability of their optoelectronic properties, balancing both the light harvesting efficiency and charge extraction into highly efficient solar devices. This feature has drawn the attention of analogous hot-topics as photocatalysis for carrying out more efficiently the degradation of organic compounds. However, the photo-oxidation ability of perovskite does not only depend on its excellent light-harvesting properties, but also on the surface chemical environment provided during its synthesis. Accordingly, we studied the role of surface chemical states of MHP based nanocrystals (NCs) synthesized by hot-injection (H-I) and anion-exchange (A-E) approaches, on their photocatalytic (PC) activity for the oxidation of β-naphthol as a model system. We concluded that iodide vacancies are the main surface chemical states that facilitate the formation of superoxide ions, O 2 •─ , responsible for the PC activity in A-E-MHP. Conversely, the PC performance of H-I-MHP is related to the appropriate balance between band gap and a highly oxidizing valence band. This work offers new insights on the surface properties of MHP related to their catalytic activity in photochemical applications.