Epitaxial growth of highly textured ZnO thin films on Si using an AlN buffer layer by atomic layer deposition

Abstract

Highly textured ZnO thin films were successfully grown on Si(111) by atomic layer deposition using an epitaxial AlN buffer layer at deposition temperatures between 100 and 300 °C. X-ray diffraction analysis proves an epitaxial relationship of ZnO[0001]//AlN[0001] and ZnO[112¯0]//AlN[112¯0]. Omega scans of the (0002) and (101¯0) reflections of ZnO demonstrate an improving crystalline quality for increasing deposition temperatures. An additional thermal postannealing step at 800 °C is found to be beneficial to further improve the crystal structure.

Spontaneous and Position-Controlled Epitaxial Growth of ZnO Nanowires on AlN/Si by CVD

“…To enable epitaxial growth of ZnO NWs, a 70 nm thin ZnO seed layer was deposited by 500 ALD cycles at a temperature of 300 °C on a 100 nm thin epitaxial AlN film on a Si substrate, as described in our previous publication. 21 The substrate was placed downstream in the growth zone at a distance of 7 cm from the source position. To minimize the influence of contaminants from the ambient air on the growth of NWs the CVD system was preheated to 150 °C and evacuated with the turbomolecular pump to a base pressure of 5 × 10 −5 mbar after installing the sample in the substrate zone.…”

“…The epitaxial growth of ZnO thin films on AlN/Si via ALD was demonstrated in our recent publication. 21 Despite numerous publications on the growth of ZnO NWs by CVD, a detailed study on the influence of growth parameters, e.g., growth time, substrate temperature, oxygen concentration, and carrier gas flow rate on length, diameter, and density for catalyst-free grown ZnO NWs is still missing. Moreover, after careful optimization of the respective growth parameters, the positioncontrolled growth of ZnO NWs will be demonstrated by patterning the ZnO ALD layer with laser interference lithography (LIL) and reactive ion etching (RIE).…”

“…To enable perfectly oriented and epitaxial growth on Si, a ZnO thin film acting as a seed layer for subsequent NW growth was grown by ALD on an AlN buffer layer. The epitaxial growth of ZnO thin films on AlN/Si via ALD was demonstrated in our recent publication . Despite numerous publications on the growth of ZnO NWs by CVD, a detailed study on the influence of growth parameters, e.g., growth time, substrate temperature, oxygen concentration, and carrier gas flow rate on length, diameter, and density for catalyst-free grown ZnO NWs is still missing.…”

ZnO/SiC/Porous-Si/Si Heterostructure: Obtaining and Properties

“…Concentrations of such penetrating dislocations can lead to significant deterioration of devices based on these heterostructures. To reduce the defects number in the SiC/Si heterostructure, the use of buffer layers is proposed [6][7]. In addition, buffer layers protect the Si substrate from chemical interaction with oxygen, water vapour, and chlorine-containing compounds [8] and prevent the appearance of amorphous and polycrystalline phases Zn 2 SiO 4 , ZnSiO 3 , Zn, SiO 2 on the semiconductor interface [9].…”

Atomic Layer Deposition and Strain Analysis of Epitaxial GaN-ZnO Core–Shell Nanowires

“…15 In a recent publication, we demonstrated the epitaxial growth of ZnO thin films at temperatures between 100 and 300 °C on planar AlN/Si substrates by ALD. 16 However, the outstanding advantage of ALD is the conformal coating of nanostructures with a high aspect ratio. Here, we present the synthesis of coherent heteroepitaxial GaN-ZnO core−shell NWs by ALD at 300 °C.…”