Solar cells employing hybrid perovskites have proven to be a serious contender versus established thin-film photovoltaic technologies. Typically, current photovoltaic devices are built up layer by layer from a transparent substrate (bottom-up approach), while the deposition of the perovskite layer itself comes with many challenges including the control of crystal size, nucleation density and growth rate. On the other hand, single crystals have been used with great success for studying the fundamental properties of this new class of optoelectronic materials. However, optoelectronic devices fabricated from single crystals often employ different materials than in their thin film counterparts. Here, we demonstrate various top-down approaches for low-temperature processed organic-inorganic metal halide perovskite single crystal devices. Our approach uses common and well-established material combinations that are often used in polycrystalline thin film devices. The use of a polymer bezel allows easier processing of small crystals and the fabrication of solution-processed, free-standing perovskite single crystal devices. All in all these approaches can supplement other measurements of more fundamental material properties often requiring perovskite single crystals by rendering a photovoltaic characterization possible on the very same crystal with comparable material combinations as in thin film devices.

Gallium–zinc oxynitride (GZNO) is a promising material system for solar-driven overall water splitting, as it exhibits a tunable band gap in the visible range, beneficial positions of valence and conduction band edges, and promising long-term stability. Fabrication of GZNO is traditionally accomplished via a solid state reaction pathway. This limits the growth of thin films or large single crystals and the precise control of the composition, which complicates investigations about fundamental properties of the material, including, for example, the influence of the single constituent ratios on the band gap. In this work, we present the growth of GZNO thin films on sapphire by plasma-assisted molecular beam epitaxy (MBE). The thin films exhibit a crystallite size of up to 50 nm and a wurtzite crystal structure with distinct short-range disorder. Variations of Ga/Zn and N/O flux ratios are found to influence the optical absorption edge of the alloy without major impact on the Urbach energy. Controlled change of the composition of the alloy reveals that the band gap reduction is caused by both an increased valence band energy, which is correlated with the N content, and a decrease of the conduction band energy which is induced by increasing Zn content. Based on these findings, GZNO thin films with band gaps of down to 2.0 eV were fabricated and their photoelectrical properties assessed. Using MBE, we overcome compositional restrictions typically associated with stoichiometric GaN:ZnO solid solutions and provide unprecedented access to new compounds within this materials class. In doing so, we elucidate the specific role of individual elements on band edge energetics and demonstrate new routes to band gap engineering for future photocatalytic and photoelectrochemical applications.

GaN nanostructures are promising for a broad range of applications due to their 3D structure, thereby exposing non-polar crystal surfaces. The nature of the exposed crystal facets, i.e., whether they are a-, m-plane, or of mixed orientation, impacts the stability and performance of GaN nanostructure-based devices. In this context, it is of great interest to control the formation of well-defined side facets. Here, we show that we can control the crystal facet formation at the nanowire sidewalls by tuning the III–V ratio during selective area growth by molecular beam epitaxy. Especially, the N flux serves as a tool for controlling the growth kinetics. In addition, we demonstrate the growth of GaN nanofins with either a- or m-plane side facets. Based on our observations, we present the underlying nanostructure growth mechanisms. Low temperature photoluminescence measurements show a correlation of the formation of structural defects like stacking faults with the growth kinetics. This article demonstrates the controlled selective epitaxy of GaN nanostructures with defined crystal side facets on large-scale available AlN substrates.