2003
DOI: 10.1063/1.1625426
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Epitaxial growth of Fe3Si/GaAs(001) hybrid structures

Abstract: We have established an optimized growth temperature range, namely, 150 °C<TG<250 °C, where ferromagnetic Fe3Si/GaAs(001) hybrid structures with high crystalline and interfacial quality can be fabricated by molecular-beam epitaxy. The composition of the Fe3Si layers, which can be regarded as a Heusler alloy, was tuned within the stable Fe3Si phase. The layers show high magnetic moments with a value of 1050 emu/cm3, which is close to that of bulk Fe3Si.

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Cited by 154 publications
(154 citation statements)
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“…The distance capillary-substrate surface was about 1.7 mm. A number of samples were prepared by using F e(CO) 5 and…”
Section: Methodsmentioning
confidence: 99%
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“…The distance capillary-substrate surface was about 1.7 mm. A number of samples were prepared by using F e(CO) 5 and…”
Section: Methodsmentioning
confidence: 99%
“…A self-made coaxial gas injection system (GIS) [21] was employed to introduce into the SEM the F e(CO) 5 and Si 5 H 12 precursors via a capillary of 0.5 mm inner diameter. The distance capillary-substrate surface was about 1.7 mm.…”
Section: Methodsmentioning
confidence: 99%
See 3 more Smart Citations