Injection of spin polarized electrons from a metal into a semiconductor is demonstrated for a GaAs/(In,Ga)As light emitting diode covered with Fe. The circular polarization degree of the observed electroluminescence reveals a spin injection efficiency of 2%. The underlying injection mechanism is explained in terms of a tunneling process.
We have established an optimized growth temperature range, namely, 150 °C<TG<250 °C, where ferromagnetic Fe3Si/GaAs(001) hybrid structures with high crystalline and interfacial quality can be fabricated by molecular-beam epitaxy. The composition of the Fe3Si layers, which can be regarded as a Heusler alloy, was tuned within the stable Fe3Si phase. The layers show high magnetic moments with a value of 1050 emu/cm3, which is close to that of bulk Fe3Si.
The structural, electrical, and magnetic properties of Fe3Si/GaAs(001) hybrid structures with high crystalline and interfacial perfection are studied. The Fe3Si/GaAs(001) hybrid structures are fabricated by molecular beam epitaxy at 200 °C. The composition of the films, which can be regarded as a Heusler alloy, is tuned over a wide range of Si content. The high crystalline and interfacial perfection is correlated with the stable Fe3Si phase. The resistivity of the films shows a strong minimum at almost exact stoichiometry which can be explained by the perfection of the ordering of the Si atoms within the Fe3Si phase. The layers are ferromagnetic at room temperature with saturation magnetization values close to bulk Fe3Si. The layers show very small coercive fields which again is correlated with high crystalline and interfacial perfection of the layers within the Fe3Si phase.
We found that Co 2 FeSi layers on GaAs͑001͒ grown by molecular-beam epitaxy with high crystal and interface perfection as well as smooth surfaces can be obtained in the low-growth-temperature regime. The layers are thermally robust up to 250°C. They have long-range order and crystallize in the Heusler-type L2 1 structure. The easy axis of magnetization is along the ͓110͔ direction caused by a dominating uniaxial in-plane magnetic anisotropy component which has an easy axis different from that of the magnetocrystalline anisotropy component.
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