Epitaxial growth of (001) hybrid structures for spintronic application

Herfort, J.; Schönherr, H.-P.; Kawaharazuka, Atsushi; Ramsteiner, M.

doi:10.1016/j.jcrysgro.2004.12.124

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Cited by 30 publications

(26 citation statements)

References 16 publications

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“…The ferromagnetic Heusler alloy Fe 3 Si is a promising material for spintronic applications because its interface with GaAs is thermally more stable than elemental ferromagnets [4][5][6]. So far the growth of ferromagnets on GaAs substrates has been focused mainly on low-index surfaces.…”

Section: Introductionmentioning

confidence: 99%

Magnetic anisotropy in Heusler alloy Fe3Si films on GaAs(113)A

Herfort¹,

Muduli²,

Friedland³

et al. 2007

Journal of Magnetism and Magnetic Materials

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Section: Introductionmentioning

confidence: 99%

Magnetic anisotropy in Heusler alloy Fe3Si films on GaAs(113)A

Herfort¹,

Muduli²,

Friedland³

et al. 2007

Journal of Magnetism and Magnetic Materials

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“…This structure is almost lattice matched to the GaAs(001) substrate yielding the desired epitaxial growth and high interfacial perfection [3]. The FM/SC interface of Fe 3 Si/GaAs(001) is thermally stable up to 700 K [6]. Moreover, a known feature of Heusler alloys is their high Curie temperature which is 840 K in this case [7].…”

Section: Introductionmentioning

confidence: 99%

Magnetic anisotropy and resonance linewidth of Fe₃Si/GaAs(001)

Lenz

Kosubek

Baberschke

et al. 2006

Phys. Status Solidi (c)

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The magnetic anisotropy energy and the resonance linewidth of epitaxial Fe3Si grown on GaAs(001) is studied by ferromagnetic resonance (FMR) technique. For a nearly stoichiometric sample (25.5% Si-content) a clear fourfold anisotropy is observed which is modulated by a small contribution of an uniaxial in-plane anisotropy. This uniaxial component is found to increase with the Fe concentration in the intermetallic compound. The samples show an exceptional narrow resonance linewidth of only 17 Oe at 9 GHz excitation frequency confirming the very high structural quality.

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“…This temperature is much higher than usually used for the growth of Fe films on GaAs [4][5][6]. Moreover, we have recently demonstrated that the Fe 3 Si films are thermally stable to ex situ annealing at least up to 400 C [7]. These properties make Fe 3 Si, a very good alternative to elemental ferromagnets.…”

Section: Introductionmentioning

confidence: 94%