Magnetic anisotropy and resonance linewidth of Fe₃Si/GaAs(001)

Abstract

The magnetic anisotropy energy and the resonance linewidth of epitaxial Fe3Si grown on GaAs(001) is studied by ferromagnetic resonance (FMR) technique. For a nearly stoichiometric sample (25.5% Si-content) a clear fourfold anisotropy is observed which is modulated by a small contribution of an uniaxial in-plane anisotropy. This uniaxial component is found to increase with the Fe concentration in the intermetallic compound. The samples show an exceptional narrow resonance linewidth of only 17 Oe at 9 GHz excitation frequency confirming the very high structural quality.

Large Nonreciprocal Propagation of Surface Acoustic Waves in Epitaxial Ferromagnetic/Semiconductor Hybrid Structures

“…30,31 As its cubic crystal structure is almost lattice-matched to the GaAs substrate (mismatch ≤ 0.01%), it is possible to grow epitaxial films with high interfacial perfection and structural quality, [32][33][34] thus leading to narrow ferromagnetic resonance (FMR) lines 35,36 characterized by damping coefficients as low as α ≈ 3 × 10 −4 . 37 Moreover, in contrast to other epitaxial ferromagnetic-semiconductor hybrid structures like GaMnAs/GaAs where efficient ME coupling has also been reported, 16,[38][39][40][41] the high Curie temperature (above 800 K) 42 of Fe 3 Si makes this material suitable for room-temperature applications. Finally, the shear magneto-elastic coefficient, b 2 , for thin films of this material has been estimated to be b 2 ≈ 2 − 7 T. 36 This value is of the same order of magnitude as e.g.…”

Magnetic properties of epitaxialFe3Si∕MgO(001)thin films

“…13͒ and of a 39 nm film grown on GaAs͑001͒. 20,23 The small thickness dependence of 0 M eff =2K 2Ќ / M − 0 M ͑Fig. 3͒ is caused by the perpendicular uniaxial anisotropy K 2Ќ since 0 M is found to be thickness independent ͑Table I͒ as measured by SQUID.…”

“…14-17͒ and Fe 3 Si/ GaAs͑001͒. [18][19][20][21][22][23] Also, the growth of Fe 3 Si films on insulating substrates such as MgO͑001͒ is of interest in connection with the tunnel magnetoresistance effect ͑TMR͒. The TMR results from the quantum mechanical tunneling with spin-split transition probabilities.…”

Magnetocrystalline anisotropy of Fe-Si alloys on MgO(001)

“…[4][5][6][7] Epitaxial Fe-Si thin films on single crystalline substrates such as GaAs and MgO have also been actively explored in recent years, partially motivated by the quest for better magnetic tunneling junctions. [8][9][10][11][12][13] However, understanding of properties of Fe-Si alloy films is still vague in various aspects, in particular regarding the strain-induced magnetic anisotropy that is an important feature for the control of magnetic media. This inspired us to investigate well-ordered epitaxial DO 3 -Fe 3 Si thin films on MgO͑001͒ using the Ferromagnetic resonance ͑FMR͒ technique, aiming at correlating and quantifying individual magnetic anisotropy terms with different growth conditions.…”