Magnetic properties of epitaxialFe3Si∕MgO(001)thin films

Abstract

The composition dependence of the magnetic as well as structural properties of epitaxial 4 -40 nm Fe 3 Si thin films on MgO͑001͒ have been investigated using ferromagnetic resonance, superconducting quantum interference device magnetometry, and magneto-optical Kerr effect. Magnetic anisotropy energy, g factor, and magnetization were determined for different samples with Si concentrations of 20%, 25%, or 30% at room temperature. Additionally, different annealing procedures were applied. The magnetization was determined to be on the order of 0 M Ϸ 1 T. It was found that the films have a dominating cubic anisotropy K 4 Ϸ 3 ϫ 10 3 J / m 3 which depends on the thermal treatment of the film and is about 1 order of magnitude smaller than the one of bulk Fe. A small uniaxial in-plane anisotropy of interfacial nature was detected. The perpendicular uniaxial anisotropy term, which is dominated by an interface contribution, favors a perpendicular easy axis. From frequency-dependent ferromagnetic resonance measurements an isotropic g factor was extracted g = 2.075͑5͒ for 8 and 40 nm samples and g = 2.080͑5͒ for the 4 nm one. Different thermal treatments of the sample showed no influence on the g factor. The magnetic anisotropy fields and g factor decrease linearly as the Si concentration increases within the D0 3 regime.

Planar Hall effect of the Fe3 Si epitaxial films with different in-plane configurations on MgO substrates

“…And the uniaxial anisotropy contributed more than cubic anisotropy to the total energy in Fe 3 Si films. The anisotropy constants are smaller than the values of bulk Fe 3 Si, which is probably due to the Si excess in the Fe 3 Si films .…”

“…However, the ϕ scan of Fe 3 Si(001) show peaks at ϕ = −180, 90, 0, 90, 180°. Thus, the Fe 3 Si(001) film was proved to be fabricated on MgO(001) with 45° in‐plane rotation . Hence the epitaxial relationship is confirmed to be Fe 3 Si(001)〈110〉||MgO(001)〈100〉, as shown in the inset of Fig.…”

“…Though, even on the substrates with large lattice mismatch and different in‐plane symmetry, Fe 3 Si can also be fabricated epitaxially. A rotation of 45° in Fe 3 Si lattice enabled the growth of high quality films with Fe 3 Si(001)[110]||MgO(001)[100] , and lattice rotations also enabled the growth of Fe 3 Si on YSZ(001) and YSZ(111) with different in‐plane configurations . However, little research on how the in‐plane configurations influence the magnetic and electrical properties of Fe 3 Si films was reported.…”

Magnetization Dynamics of an Individual Single‐Crystalline Fe‐Filled Carbon Nanotube

“…Our results show that the FeCNT is indeed not homogeneous but is built from 300 to 400 nm long single‐crystalline segments. Based on the experimental results together with micromagnetic simulations, it can be concluded that each of these segments is a magnetically high quality Fe nanowire with almost the bulk properties of Fe . The single‐crystal aspect together with the very small linewidth obtained from measurements promotes the FeCNTs as appealing candidates for spin‐wave transport in magnonic applications.…”

Improved interfacial local structural ordering of epitaxial Fe3Si(001) thin films on GaAs(001) by a MgO(001) tunneling barrier

“…6 Epitaxial Fe 3 Si growth on MgO(001) and on GaAs(001) was reported in previous works. 7,8 For a detailed analysis of the Fe 3 Si/GaAs(001) interface by means of CEMS, we have applied the 57 Fe 3 Si tracer layer technique. The position of 57 Fe-enriched probe layers (95% enriched in 57 Fe) with a nominal thickness of 7 atomic monolayers (ML) (4 ML correspond to the lattice constant of bulk Fe 3 Si, a Fe 3 Si ¼ 5:66Å) is shown in the insets of Fig.…”