Environmental Challenges for 45-nm and 32-nm node CMOS Logic

Abstract

Abstract-The objective of this work is to understand the the 1980's grew to include tungsten, titanium, copper and materials and energy requirements, and emissions associated tantalum in the 1990's. In the past few years, however, dozens with new semiconductor manufacturing technology nodes.of new elements as well as a broad array of highly tailored Current and near-future CMOS technologies (for the 45-nm and compounds have been integrated into the process flow or are 32-nm nodes) are investigated using an inventory based on being considered as tools to overcome the challenges of current bottom-up process data. The process flow of the CMOS chip is leakage and tunneling, or to build novel geometrical modeled by updating an existing inventory analysis (for 130 nm arrangements, in order to achieve ever smaller devices.node devices) to include strained Si channels, metal gates, 10 layers of interconnect and high-k gate dielectrics used in 45-nm and 32-nm CMOS nodes. Conclusions are made concerning emissions of new materials and trends in life cycle energy consumption of logic devices.

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