Enthalpy of formation of Schottky defects in semiconductors

Gorichok, I. V.

doi:10.1134/s1063783412070165

Cited by 6 publications

(2 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As the values of atomization energy of SmS are large, the formation energies of vacancies are quite significant when compared to other semiconductor crystals [38]. For the samarium vacancy we received the value 11.54 eV, and for sulfur sulfur vacancy -the value 10.64 eV.…”

Section: Z1mentioning

confidence: 99%

Intrinsic Point Defects of Samarium Monosulphide Crystals in Metal Phase

Horichok¹,

Shevchuk²,

Parashchuk³

et al. 2017

ChChT

View full text Add to dashboard Cite

show abstract

Section: Z1mentioning

confidence: 99%

Intrinsic Point Defects of Samarium Monosulphide Crystals in Metal Phase

Horichok¹,

Shevchuk²,

Parashchuk³

et al. 2017

ChChT

View full text Add to dashboard Cite

show abstract

“…1), представленной преимущественно ростовыми дислокациями. В отдельных случаях, при наличии в атмосфере кадмия или других веществ появляются преципитаты с трансформацией дислокаций в дислокационные петли или дефекты упаковки [3,[6][7].…”

unclassified

Thermal Stability of Cadmium Telluride in Infrared Detectors for Monitoring Fire Conditions

Mozzherin,

Paklin

2023

Safety of Technogenic and Natural Systems

View full text Add to dashboard Cite

Introduction. Thermal effect of fire on technical means is a common and serious problem. In this regard, it seems an urgent task to study physicochemical and thermal transformations in devices based on cadmium telluride during man-made or natural fires. For a number of materials, such studies have not been conducted, and the available results are insufficient or narrowly focused. The proposed article presents new data on the defect resistance and applicability of the material depending on the thermal effect. The work objective is to study the features of degradation under the influence of extreme temperatures to create new materials with specified properties.Materials and Methods. Cadmium telluride (CdTe) samples used in solar panels and detectors were studied. In the practical part of the work, the thermal effect on the sample of normal and extreme temperatures was evaluated, followed by the study of the material by transmission electron microscopy methods. The experiments simulated a zone of thermal impact of a fire. The computational and theoretical work consisted in improving the mathematical model of physical and chemical transformations and the evolution of defects under thermal influence up to 1092 °C. The mathematical model took into account the heat dose characteristic of uncontrolled combustion. The Maple software package was used to solve the equations.Results. The formation of defects in a CdTe sample at significantly different levels of thermal exposure was visualized. The lower limit was about 20 °С, the upper one was more than 600 °С. Transformations in CdTe control samples under the influence of temperatures up to 1092 °С with a step of 15 °С were worked out in detail. Point defects caused by the influence of temperature were presented as a factor of destruction of the material, and consequently, failures in the operation of the device. A system of equations was solved that takes into account a set of parameters: the frequency of vibrations of atoms in the lattice, temperature, concentrations of CdTe nodes, interstitial atoms and vacancies, migration and attachment of interstitial atoms and vacancies. The concentrations of vacancies and interstitial atoms in CdTe samples depending on thickness and temperature were graphically presented. The results of scientific research allowed us to assert that CdTe-based detectors worked relatively correctly only at a heat dose of up to 400 °С. In the ranges of 400-600 °С, the defective network of the material actively evolved, preventing destruction. However, a further increase in thermal exposure led to complete degradation of the equipment, which did not allow the use of cadmium telluride in extreme conditions, even for a short time.Discussion and Conclusion. The proposed improved model of physical and chemical transformations in CdTe-based devices in heat-affected areas will allow a more selective approach to the use of equipment. In addition, it is necessary to improve materials and increase their resistance to extreme temperatures.

show abstract

Particularities of the interstitial atoms and vacancies clusters formation in a thin cadmium telluride foil during in situ electron irradiation in a TEM

Loginov

Мозжерин

Paklin

2022

IOP Conf. Ser.: Mater. Sci. Eng.

View full text Add to dashboard Cite

The formation of interstitial atoms and vacancies, as well as their clusters in the form of dislocation loops and voids in CdTe is simulated. The sizes and features of the growth of dislocation loops and voids were determined depending on the irradiation time, taking into account the decrease in the number of nodes of the semiconductor crystal lattice with the irradiation time, since in experiments we studied a thin CdTe foil in a transmission electron microscope (TEM). The calculated and experimental data are compared.

show abstract

Enthalpy of formation of Schottky defects in semiconductors

Cited by 6 publications

References 17 publications

Intrinsic Point Defects of Samarium Monosulphide Crystals in Metal Phase

Intrinsic Point Defects of Samarium Monosulphide Crystals in Metal Phase

Thermal Stability of Cadmium Telluride in Infrared Detectors for Monitoring Fire Conditions

Particularities of the interstitial atoms and vacancies clusters formation in a thin cadmium telluride foil during in situ electron irradiation in a TEM

Contact Info

Product

Resources

About