Based on a crystal chemical model for defect subsystems, the equilibrium concentrations of point defects and free charge carriers in PdTe crystals submitted to two-temperature annealing have been calculated as a function of temperature T and tellurium vapor pressure P Те . The technological conditions leading to the formation of materials with n-or p-type conductivity have been determined.
Lead telluride / Two-temperature annealing / Electrical properties / Point defects
The defective subsystem of samarium monosulphide crystals in metallic phases with different stoichiometric deviation has been investigated. Based on the proposed model of defective subsystem the concentration dependence of samarium monosulphide density has been explained and the temperature dependence of solidus line with metal excess has been determined.
Abstract.The equilibrial values of the vacancy concentration of chalcogen and antistructural samarium atoms in metallic phase of SmS were calculated by minimization the crystal thermodynamic potential. It was determined that the dominant defects are + at the concentration of samarium 50,5-54 at. % and at the temperature of T=300-400 K. Also the concentration of negatively charged sulfur vacancies − is less on 1-2 points. The concentric dependence of samarium monosulphide density was explained using this offered model.
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