Based on a crystal chemical model for defect subsystems, the equilibrium concentrations of point defects and free charge carriers in PdTe crystals submitted to two-temperature annealing have been calculated as a function of temperature T and tellurium vapor pressure P Те . The technological conditions leading to the formation of materials with n-or p-type conductivity have been determined.
Lead telluride / Two-temperature annealing / Electrical properties / Point defects
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