2015
DOI: 10.1038/nnano.2015.191
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Enhancement of the anisotropic photocurrent in ferroelectric oxides by strain gradients

Abstract: The phase separation of multiple competing structural/ferroelectric phases has attracted particular attention owing to its excellent electromechanical properties. Little is known, however, about the strain-gradient-induced electronic phenomena at the interface of competing structural phases. Here, we investigate the polymorphic phase interface of bismuth ferrites using spatially resolved photocurrent measurements, present the observation of a large enhancement of the anisotropic interfacial photocurrent by two… Show more

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Cited by 143 publications
(78 citation statements)
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“…[113] This effect reportedly affects the ferroelectric properties of materials, such as their critical thickness, the electrical transport of the domain wall, and the mechanical switching of polarization. [115][116][117] It consequently also affects the observed PFM response by unpredictably changing the material properties.…”
Section: Electrochemical Strainmentioning
confidence: 99%
“…[113] This effect reportedly affects the ferroelectric properties of materials, such as their critical thickness, the electrical transport of the domain wall, and the mechanical switching of polarization. [115][116][117] It consequently also affects the observed PFM response by unpredictably changing the material properties.…”
Section: Electrochemical Strainmentioning
confidence: 99%
“…These should involve at least the lead-free piezoelectric elements containing no piezoelectric materials working through flexoelectric couplings2223242526272829, perovskite based photovoltaics/photocatalysis3031, flexible devices32 and gradient functional materials33.…”
mentioning
confidence: 99%
“…Nevertheless, the above proposals are based on either the theoretical simulations16242527 or mechanical bending of nanofibers/cantilevers17181920 or limited information near the domain walls of ferroelectrics3031. Although mechanical buckling seems an effective way to pattern stretchable semiconductor and ferroelectric nanoribbons3234, the corresponding attainable strain gradients are relatively lower and failure tends to occur when manipulating brittle ceramics such as ferroelectrics.…”
mentioning
confidence: 99%
“…The value of approximately 0.1 Å in the lower part is similar to the value provided in previous reports for BFO thin films24, while the value of approximately 0.7 Å in the upper part is the largest value obtained so far. The large value that represents the cation displacement in the upper region can be attributed to the flexoelectric effect arising from the strain gradient near the t c [refs 25,26] or small tilt effect due to sample bending in the upper part as compared to the lower part. It should be noted that when a thin film is subjected to strain gradient that varies in different localities, the local crystal orientation in the sample can even also accordingly change as shown in the FFT patterns for the lower and upper parts of BiFeO 3 (Fig.…”
Section: Resultsmentioning
confidence: 99%