Enhancement of moisture resistance of spin-on low-k HSQ films by hot wire generated atomic hydrogen treatment

Kumbhar, Avinash S.; Singh, Sunil Kumar; Dusane, Rajiv O.

doi:10.1016/j.tsf.2005.07.214

Cited by 14 publications

(13 citation statements)

References 4 publications

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“…The bending modes cannot be observed any more after the annealing, consistent with the observation in Ref. 21 2) matrix, which help to resist oxidation at high temperatures in air. Similar mechanism may also apply to the Ni-SiO 2 system derived from TEOS precursor, which also has Si-O network structures.…”

Section: -5supporting

confidence: 89%

“…13 The associated vibration modes of the Si-O-Si network and cage structures are at 1070 cm À1 and 1130 cm À1 , while the bending modes are at 830 and 880 cm À1 , respectively. 21,22 When mixed with Ni and annealed at around 750 C, the intensity of vibration modes at 1070 cm À1 and 1130 cm À1 both decrease, with the latter one (cage structure) decreasing more significantly. The bending modes cannot be observed any more after the annealing, consistent with the observation in Ref.…”

Section: -5mentioning

confidence: 99%

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Oxidation-resistant, solution-processed plasmonic Ni nanochain-SiOx (x < 2) selective solar thermal absorbers

Wang

Zhang

et al. 2014

Journal of Applied Physics

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Right click to open a feedback form in a new tab to let us know how this document benefits you.Metal oxidation at high temperatures has long been a challenge in cermet solar thermal absorbers, which impedes the development of atmospherically stable, high-temperature, high-performance concentrated solar power (CSP) systems. In this work, we demonstrate solution-processed Ni nanochain-SiO x (x < 2) and Ni nanochain-SiO 2 selective solar thermal absorbers that exhibit a strong antioxidation behavior up to 600 C in air. The thermal stability is far superior to previously reported Ni nanoparticle-Al 2 O 3 selective solar thermal absorbers, which readily oxidize at 450 C. The SiO x (x < 2) and SiO 2 matrices are derived from hydrogen silsesquioxane and tetraethyl orthosilicate precursors, respectively, which comprise Si-O cage-like structures and Si-O networks. Fourier transform infrared spectroscopy shows that the dissociation of Si-O cage-like structures and Si-O networks at high temperatures have enabled the formation of new bonds at the Ni/SiO x interface to passivate the surface of Ni nanoparticles and prevent oxidation. X-ray photoelectron spectroscopy and Raman spectroscopy demonstrate that the excess Si in the SiO x (x < 2) matrices reacts with Ni nanostructures to form silicides at the interfaces, which further improves the anti-oxidation properties. As a result, Ni-SiO x (x < 2) systems demonstrate better anti-oxidation performance than Ni-SiO 2 systems. This oxidation-resistant Ni nanochain-SiO x (x < 2) cermet coating also exhibits excellent hightemperature optical performance, with a high solar absorptance of $90% and a low emittance $18% measured at 300 C. These results open the door towards atmospheric stable, high temperature, highperformance solar selective absorber coatings processed by low-cost solution-chemical methods for future generations of CSP systems. V C 2014 AIP Publishing LLC.

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Section: -5supporting

confidence: 89%

Section: -5mentioning

confidence: 99%

Oxidation-resistant, solution-processed plasmonic Ni nanochain-SiOx (x < 2) selective solar thermal absorbers

Wang

Zhang

et al. 2014

Journal of Applied Physics

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“…2 While no one has yet verified a primary contaminant, water has always been considered to play a critical role in the cross-linking mechanism. 29,30 By eliminating these outside sources of contamination with a top coat, the delay effect is stopped. 29,30 By eliminating these outside sources of contamination with a top coat, the delay effect is stopped.…”

Section: Resultsmentioning

confidence: 99%

Improved time dependent performance of hydrogen silsesquioxane resist using a spin on top coat

Westly¹,

Tennant²,

Aida³

et al. 2011

Journal of Vacuum Science & Technology B, Nanotechnology an

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Articles you may be interested inHydrogen silsesquioxane bilayer resists-Combining high resolution electron beam lithography and gentle resist removal J. Vac. Sci. Technol. B 31, 06F102 (2013); 10.1116/1.4822136Time-dependent exposure dose of hydrogen silsesquioxane when used as a negative electron-beam resist Hydrogen silsesquioxane for direct electron-beam patterning of step and flash imprint lithography templates Hydrogen silsesquioxane (HSQ) is a high resolution negative tone electron beam (e-beam) resist with a resolution well below 10 nm. However, it is known that the time delay between spinning and e-beam exposure has an effect on the contrast and sensitivity. Significant effort has been placed on finding the best developer conditions (e.g., time, temperature, concentration, etc.) to maximize the performance of the resist. However, to date, little progress has been made to mitigate the problem of temporal dependence of optimal results. The authors report a significantly improved time dependent performance of HSQ by using a spin on top coat developed by Showa Denko. The material contains a conductive, water-soluble polymer (i.e., poly[isothianaphthene sulfonate]) and surfactants. Exposure delays from 0 to 12 h were performed in vacuum and the effect on sensitivity and ultimate resolution was compared to results without a top coat. Various bottom layers and top coats were also used and the change in performance was evaluated. In all cases a significant improvement is observed when a top coat is applied and little change occurs with other parameters. The time lag effect is shown to be the equivalent of a decrease in sensitivity over time with about 30% degradation from the optimal dose over the test period if no top coat is used. The use of the top coat reduces the effect to about 5% while also improving initial sensitivity. The authors believe this represents a widely applicable solution to the time lag issue common to HSQ processes.

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“…Figure 1(a) shows the FTIR spectrum of the control sample (baked at 180°C as previously described) as well as the samples annealed in the RTA at different temperatures. The peaks of interest in the FTIR spectrum are the Si-O-Si double peak around 1100 cm −1 , the H-Si-O double peak centred around 850 cm −1 , the Si-H peak at 2250 cm −1 [23] and the broad Si-OH peak at 3350 cm −1 [24]. A close-up of the Si-O-Si and H-Si-O double peaks is shown in Fig.…”

Section: Structural Properties Of Hsqmentioning

confidence: 92%

“…This change can be attributed to the disassociation of the Si-H bond [20] as is seen in the FTRI spectrum. Formation of Si-OH bond can also be observed, which is typically associated with moisture uptake [24]. Curing at 750°C and 950°C yields little change in refractive index, however, there is still a clear change in the FTIR spectrum.…”

Section: Structural Properties Of Hsqmentioning

confidence: 99%

Trimming of silicon-on-insulator ring-resonators via localized laser annealing

Biryukova¹,

Sharp²,

Klitis³

et al. 2020

Opt. Express

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We propose a post-fabrication trimming method for the silicon-on-insulator photonic platform based on localised laser annealing of hydrogen silsesquioxane (HSQ) cladding. The technique is fast, does not degrade the device performance, does not require additional fabrication steps, and can therefore be implemented at minimal cost. Here we experimentally demonstrated how the spectrum of a ring resonator can be shifted by over 1 nm by annealing a section of the device as short as 30 µm, corresponding to a change in the effective refractive index of ∼10 −2 . Modifications of both the HSQ refractive index and its chemical structure as a function of the annealing temperature are also discussed. Trimming of multi-ring resonators indicate that this technique can be effectively used for post-fabrication reconfiguration of complex photonic circuits or to compensate for the fabrication tolerances of a typical CMOS process.

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Enhancement of moisture resistance of spin-on low-k HSQ films by hot wire generated atomic hydrogen treatment

Cited by 14 publications

References 4 publications

Oxidation-resistant, solution-processed plasmonic Ni nanochain-SiOx (x < 2) selective solar thermal absorbers

Oxidation-resistant, solution-processed plasmonic Ni nanochain-SiOx (x < 2) selective solar thermal absorbers

Improved time dependent performance of hydrogen silsesquioxane resist using a spin on top coat

Trimming of silicon-on-insulator ring-resonators via localized laser annealing

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Enhancement of moisture resistance of spin-on low-k HSQ films by hot wire generated atomic hydrogen treatment

Cited by 14 publications

References 4 publications

Oxidation-resistant, solution-processed plasmonic Ni nanochain-SiOx (x &lt; 2) selective solar thermal absorbers

Oxidation-resistant, solution-processed plasmonic Ni nanochain-SiOx (x &lt; 2) selective solar thermal absorbers

Improved time dependent performance of hydrogen silsesquioxane resist using a spin on top coat

Trimming of silicon-on-insulator ring-resonators via localized laser annealing

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Oxidation-resistant, solution-processed plasmonic Ni nanochain-SiOx (x < 2) selective solar thermal absorbers

Oxidation-resistant, solution-processed plasmonic Ni nanochain-SiOx (x < 2) selective solar thermal absorbers