Enhancement of data storage capability in a bilayer oxide-based memristor for wearable electronic applications

Abstract

In this work, a ZnO/NiO bilayer architecture is introduced to fabricate a transparent and flexible resistive random access memory device (Cu/ZnO/NiO/ITO) on polyethylene terephthalate substrate. The device exhibits excellent resistive switching (RS) characteristics, such as forming-free characteristic, low operating voltages, outstanding uniformity, long retention time (>10 4 s), high ON/OFF current ratio ~10 3 , reliable multilevel cell characteristics and excellent mechanical flexibility. The multilevel properties have been systematically evaluated by varying the compliance current and tuning the stopping voltage, which shows that the whole resistance state is distinguishable and remained stable without any considerable deprivation over 10 3 s. Intrinsic tailoring of RS mechanism has been well explained in the framework of electric field-induced formation and rupture of the reproducible Cu filaments in ZnO/NiO layer. Furthermore, the metallic nature of conducting filament has been confirmed by temperature-dependent variation of the high-and low-resistance states. Due to the increasing demand for flexible electronics, the mechanical robustness of the proposed device has been examined by varying the bending time and radius. The present RS device shows potential towards integration in many transparent, flexible and high-density storage devices, such as electronic skins and flexible displays.

Solution-processed light-induced multilevel non-volatile wearable memory device based on CsPb2Br5 perovskite

“…It is known that multilevel resistive switching can be achieved not only by modulating the stop voltage in the RESET process, but also via modulating the CC in the SET process. 41–44 Here, the multilevel data storage capability of the as-fabricated CsPb 2 Br 5 -based device was examined by controlling the current compliance, as shown in Fig. 4c.…”

Multilevel Programming and Light-Assisted Resistive Switching in a Halide-Tunable All-Inorganic Perovskite Cube for Flexible Memory Devices

“…Notably, the HRS is almost independent of CC, whereas the LRS current was found to be increasing with increasing CC, as shown in Figure 6c, attributing to the size of conducting filaments which increase with the increase in CC. 60 Hence, transportation of a large number of charge carriers contributed to the higher values of LRS current. These three distinct and stable LRSs of the device reveal multibit data storage capacity of a CsPbBr 3 cube-based device without miniaturization of the device structure.…”

Improvement of the Resistive Switching Characteristics upon Halide Mixing in an All-Inorganic RbPbI3 Perovskite Polymer Composite Based Flexible Device

“…Halide perovskite (HP) materials have recently gathered immense attention among researchers due to their superior ability of charge transfer, long charge diffusion length, high carrier mobility, etc. , Moreover, because of the simple processability and feasibility in electronic devices, HPs have made a significant impact in the past few years. In particular, as a light-absorbing material, HP’s exceptional performance in photovoltaics has triggered tremendous exploration by academia and industries. − However, current–voltage hysteresis found in several reports has been credited to the presence of defects in HPs. , In this context, preferential investigations have been focused on resistive memory devices in light of the defect/trap-assisted conduction mechanism. ,− Resistive random access memory (RRAM) devices evolve as the next-generation nonvolatile memory devices to revolutionize the data storage market. − Basically, RRAM devices work on the principle of resistance switching from one state to another, namely, high-resistance state (HRS) to low-resistance state (LRS) and vice versa. , RRAM devices procure advantages over traditional flash memories in terms of low power consumption, high density storage, reproducibility, long data retention, and light-induced modulation of memory parameters, etc. ,− Specifically, the polymer-based resistive memories possess few advanced features like flexibility, 3D-stacking capability, lower fabrication cost, and light weight, which make it a suitable candidate for next-generation ultraflexible devices. ,, Usually, in the polymer composite system, the embedded nanoparticles (NPs) serve as charge-trapping centers and transporting medium, while the polymer acts as the blocking matrix. ,, Therefore, the insertion of suitable NPs in an appropriate amount in the polymer matrix is crucial to get better switching parameters, such as current ON/OFF ratio, switching speed, power consumption, retention time, stability, and reproducibility, etc. Moreover, perovskite NPs embedded in the polymer matrix would minimize the top metal electrode’s local reaction with the perovskite material.…”