Improvement of the Resistive Switching Characteristics upon Halide Mixing in an All-Inorganic RbPbI₃ Perovskite Polymer Composite Based Flexible Device

Abstract

The magnificent properties of all-inorganic halide perovskites prompt them to be explored in electronic applications. In this report, we synthesized all-inorganic RbPbI3 perovskite nanorods (PNRs), with and without halide mixing. Synthesized perovskite nanorods were embedded in poly­(methyl methacrylate) (PMMA) for resistive switching (RS) application. The devices with pure RbPbI3 PNRs@PMMA did not show significant switching characteristics. However, the devices with chloride (Cl)-doped RbPbI3 in PMMA exhibited prominent RS behavior, which is attributed to the induction of defect/trap states due to Cl substitution at the halide site. However, a suitable concentration of the Cl-doped RbPbI3 in the PMMA matrix is desired for better device performance in terms of reliability, flexibility, and long-term stability. Finally, the switching mechanism could be explained in association with charge trapping and detrapping, facilitated by the defects/traps inside the mixed halide PNRs.

Solution-processed light-induced multilevel non-volatile wearable memory device based on CsPb2Br5 perovskite

“…It is known that multilevel resistive switching can be achieved not only by modulating the stop voltage in the RESET process, but also via modulating the CC in the SET process. 41–44 Here, the multilevel data storage capability of the as-fabricated CsPb 2 Br 5 -based device was examined by controlling the current compliance, as shown in Fig. 4c.…”

CdSe Quantum Dot-Based Nanocomposites for Ultralow-Power Memristors

“…With the appearance of the big data era and the internet of things (IoT), there has been an explosion in global digital information over the past decades. , This huge generation of digital data increases the demand for exploring alternate data storage technology over conventional silicon-based technology because silicon-based semiconducting devices are confronted with the theoretical and physical limits of downscaling. − Due to the von Neumann bottleneck of limited data transfer speed between the separated storage and central processing units and waning off Moore’s law in miniaturization of devices, the search for a next-generation revolutionary memory device with high density and speed is highly essential. , Resistive random access memory (RRAM) shows great promise for the next-generation computing memory storage technology over other memory technologies such as hard disk drives (HDD), static random access memory (SRAM), dynamic random access memory (DRAM), etc. − The RRAM technology, on the basis of change in electrical resistance regulated by the electrical impulse, has become very popular because it has several advantages such as high stacking density and scalability, low power consumption, multilevel storage capability, fast switching speed, and simple metal–insulator–metal (MIM) device structure. − Various types of materials such as oxides, , organic molecules , and polymers, , inorganic–organic composites, , metal chalcogenide quantum dots (QDs), , and transition metal dichalcogenide–rGO composites , exhibited resistive memory switching behavior. Among them, nanocomposites consisting of QDs dispersed in the polymer matrix can provide many advantages over other active materials such as oxides and organic molecules.…”

“…8−11 The RRAM technology, on the basis of change in electrical resistance regulated by the electrical impulse, has become very popular because it has several advantages such as high stacking density and scalability, low power consumption, multilevel storage capability, fast switching speed, and simple metal−insulator−metal (MIM) device structure. 12−15 Various types of materials such as oxides, 11,16 organic molecules 17,18 and polymers, 19,20 inorganic−organic composites, 21,22 metal chalcogenide quantum dots (QDs), 23,24 and transition metal dichalcogenide−rGO composites 25,26 exhibited resistive memory switching behavior. Among them, nanocomposites consisting of QDs dispersed in the polymer matrix can provide many advantages over other active materials such as oxides and organic molecules.…”

Compositional Engineering in α-CsPbI3 toward the Efficiency and Stability Enhancement of All Inorganic Perovskite Solar Cells

“…The peak positions are in accordance with the reported literature. 43,54 All the elemental peaks of Sn-alloyed film are slightly blue-shifted in comparison to the pristine film. This higher binding energy with Sn 2+ alloying indicates a more substantial elemental bonding effect.…”