Enhancement in light emission efficiency of Si nanocrystal light-emitting diodes by a surface plasmon coupling

Huh, Chul; Choi, Chel‐Jong; Kim, Wanjoong; Kim, Bong Kyu; Park, Byoung-Jun; Jang, Eun-Hye; Kim, Sang-Hyeob; Sung, Gun Yong

doi:10.1063/1.4711033

Cited by 32 publications

(25 citation statements)

References 24 publications

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“…Lin et al have introduced a surface nano-roughened Si substrate to enhance the external quantum efficiency by releasing the total reflection effect occurred at LED-air interface [23]. Huh et al demonstrated the PL intensity enhancement of Si-QDs by employing Au nanoparticles [24]. Li et al fabricated Ag island layer in the SiN x LED to raise the injection current and the radiative efficiency.…”

Section: Introductionmentioning

confidence: 98%

Wavelength-Shifted Yellow Electroluminescence of Si Quantum-Dot Embedded 20-Pair SiNx/SiOx Superlattice by Ostwald Ripening Effect

Tai¹,

Lin²

2013

IEEE Photonics J.

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Yellow electroluminescence (EL) of a 20-pair Si-rich SiN x /SiO x superlattice is demonstrated by plasma-enhanced chemical vapor deposition (PECVD) and annealing process. After annealing at 900 C for 30 min, two photoluminescence (PL) peaks at 480 and 570 nm are observed to blue-shift the PL wavelength, and the corresponding peak intensity is enhanced due to the self-aggregation of Si quantum dots (QDs). When increasing the annealing temperature to 1050 C, the PL peaks caused by the aggregated Si-QDs in SiN x and SiO x layers red-shift to 500 and 600 nm, thereby shifting the PL peak wavelength to 520 nm. Such a wavelength red-shifting phenomenon is mainly attributed to the formation of large Si-QDs due to the Ostwald ripening effect. The turn-on voltage and the V -I slope of the ITO/SiN x /SiO x /p-Si/Al LED device are 200 V and 15.5 kV/mA with FowlerNordheim (FN) tunneling assistant carrier transport under an effective barrier height of 1.3 eV. Maximum output-power-current slope of 0.2 W/A at power conversion efficiency of 10 À6 is detected.

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Section: Introductionmentioning

confidence: 98%

Wavelength-Shifted Yellow Electroluminescence of Si Quantum-Dot Embedded 20-Pair SiNx/SiOx Superlattice by Ostwald Ripening Effect

Tai¹,

Lin²

2013

IEEE Photonics J.

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“…SPs describe collective oscillations of electrons at the interfaces between metals and dielectrics, which have attracted intense interest benefit from their wide range of potential applications, such as biological sensors, nonlinear optics and surface-enhanced Raman spectroscopy (SERS), etc [8]- [10]. Nowadays, one of its significant role is to achieve enhanced emission from Si-based LEDs [11]- [14]. And the essence is that the emitted light can couple into the SP modes of the metal nanoparticles effectively, which can help the light to escape into the free space.…”

mentioning

confidence: 99%

Plasmon-Enhanced Emission From CMOS Compatible Si-LEDs With Gold Nanoparticles

Cheng

Huang

Wang

et al. 2015

IEEE Photon. Technol. Lett.

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Complementary metal-oxide-semiconductor (CMOS) compatible silicon (Si)-based light sources are attracting more and more attention for the potential to realizing on-chip optical interconnection ultimately. Annealed noble metal nanoparticles (NPs) are often used to enhance the emission efficiency of low-efficiency light emitters due to the surface plasmon (SP) effects. Compared with silver NPs (Ag NPs) and gold NPs (Au NPs) show excellent stability in the air environment. However, Au NPs are not always chosen to enhance the emission efficiency of light-emitting diodes (LEDs) due to the high annealing temperature and CMOS incompatible. Here, we report the first study of enhancing emission from CMOS compatible Si-based LEDs by transferring annealed Au NPs onto the device surfaces. A 4.3-fold total enhancement integrated across the electroluminescence spectrum and an eightfold enhancement at 900 nm are ultimately achieved. The enhancement is attributed to electrical performances improvement of the Si-based LEDs and enhanced scattering by Au NPs due to the coupling between the SP modes of Au NPs and the waveguide modes of Si slab waveguide.

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“…The R S can be calculated from the diode relation of a p-n junction. 17 The calculated R S is shown in Fig. 2(b).…”

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confidence: 99%

Enhancement in light emission and electrical efficiencies of a silicon nanocrystal light-emitting diode by indium tin oxide nanowires

Huh

Kim

Ahn

et al. 2014

Applied Physics Letters

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We report an enhancement in light emission and electrical efficiencies of a Si nanocrystal (NC) light-emitting diode (LED) by employing indium tin oxide (ITO) nanowires (NWs). The formed ITO NWs (diameter < 50 nm) are compactly knitted and have a tendency to grow perpendicularly above the surface. The electrical characteristics of Si NC LED were significantly improved, which was attributed to an enhancement in the current spreading property due to densely interconnecting ITO NWs. In addition, light output power and wall-plug efficiency from the Si NC LED were enhanced by 45% and 38%, respectively. This was originated from an enhancement in the escape probability of the photons generated in the Si NCs due to multiple scatterings at the surface of ITO NWs acting as a light waveguide. We show here that the use of the ITO NWs can be very useful for realizing a highly efficient Si NC LED.

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Enhancement in light emission efficiency of Si nanocrystal light-emitting diodes by a surface plasmon coupling

Cited by 32 publications

References 24 publications

Wavelength-Shifted Yellow Electroluminescence of Si Quantum-Dot Embedded 20-Pair SiNx/SiOx Superlattice by Ostwald Ripening Effect

Wavelength-Shifted Yellow Electroluminescence of Si Quantum-Dot Embedded 20-Pair SiNx/SiOx Superlattice by Ostwald Ripening Effect

Plasmon-Enhanced Emission From CMOS Compatible Si-LEDs With Gold Nanoparticles

Enhancement in light emission and electrical efficiencies of a silicon nanocrystal light-emitting diode by indium tin oxide nanowires

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