The light output power and wall‐plug efficiency of the Si nanocrystal (nc‐Si) light‐emitting diode (LED) were significantly enhanced by employing the multiple‐luminescent structures. This improvement was attributed to a strong confinement of carriers in the SiNx luminescent layers containing the nc‐Si due to the band offset between the luminescent layer and barrier layer.
We report an enhancement in light emission efficiency form Si nanocrystal (NC) light-emitting diodes (LEDs) via surface plasmons (SPs) by employing Au nanoparticles (NPs). Photoluminescence intensity of Si NCs with Au NPs was enhanced by 2 factors of magnitude due to the strong coupling of Si NCs and SP resonance modes of Au NPs. The electrical characteristics of Si NC LED were significantly improved, which was attributed to an increase in an electron injection into the Si NCs due to the formation of inhomogeneous Schottky barrier at the SiC-indium tin oxide interface. Moreover, light output power from the Si NC LED was enhanced by 50% due to both SP coupling and improved electrical properties. The results presented here can provide a very promising way to significantly enhance the performance of Si NC LED.
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