Enhanced transmission characteristics of on-chip interconnects with orthogonal gridded shield

Lutz, R.D.; Tripathi, V.K.; Wiesshaar, A.

doi:10.1109/epep.2000.895556

Cited by 6 publications

(9 citation statements)

References 13 publications

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“…Hence, efforts have been devoted to the development of SW-microstrip transmission lines. They were demonstrated in a silicon technology using an orthogonal grid of grounded shielded lines between the strip and the ground plane [7]. Due to the dimensions of the grid lines, the structure behaved as a high-low impedance structure rather than a distributed one, leading to intrinsic limitations at mmW due to low-pass filtering behavior.…”

Section: Introductionmentioning

confidence: 99%

Modeling and Characterization of Slow-Wave Microstrip Lines on Metallic-Nanowire- Filled-Membrane Substrate

Serrano

Franc

Assis

et al. 2014

IEEE Trans. Microwave Theory Techn.

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In this paper, a physical model of the slow-wave (SW) microstrip lines based on a metallic-nanowire-filled-membrane substrate is presented for the first time. The model properly predicts the behavior of the SW transmission lines as shown by the experimental results. Two sets of transmission lines differing in oxide thickness with various widths were fabricated and characterized up to 70 GHz. The electrical model is valid for both oxide thicknesses and microstrips width. High-quality factors are obtained, above 40 from 30 GHz up to 70 GHz, paving the way for further designs of passive circuits, like power dividers or hybrid couplers, with good performance.

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Section: Introductionmentioning

confidence: 99%

Modeling and Characterization of Slow-Wave Microstrip Lines on Metallic-Nanowire- Filled-Membrane Substrate

Serrano

Franc

Assis

et al. 2014

IEEE Trans. Microwave Theory Techn.

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“…Because the signals in such IC's interconnects spread from dc up to the millimeterwave frequency and even beyond, the dispersion and losses from interconnects and lossy substrates will induce the amplitude attenuation and the waveform distortion of signals. Some on-chip planar multilayer structures have been proposed to achieve size reduction as well as improved transmission characteristics: the TFMSL [1], patterned ground shield [2], etc., where thin-film metallization layers are embedded as ground planes. Unlike conventional lossless microstrip transmission lines, in which the higher harmonic of pulses (compared to the inflection frequency) will travel at a lower velocity than the lower harmonics, typical IC interconnects are fabricated on lossy silicon substrates so as to owe three possible signal-propagation modes: the slow-wave mode, the skin-effect mode, and the quasi-TEM mode [3].…”

Section: Introductionmentioning

confidence: 99%

Transient Signal Distortion in Silicon-Based Interconnects over Thin-Film Metal Ground Layers

Zhang

Song

2006

2006 IEEE Electrical Performane of Electronic Packaging

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This paper studies the effect of the embedded thin-film metallization layer, normally designed as ground plane, on the transient characteristics of pulse propagation in silicon-based multilayer interconnects. The spectral domain approach (SDA) and FFT are used to analyze an on-chip thin-film microstrip line (TFMSL) structure. It is found that such thin-film metallization can excite the slow wave. And the thickness factor has great influences on the signal distortion. IntroductionThe transient characterization of electric interconnect and metallization structures have become an essential issue in the design of nowadays silicon-based integrated circuits (ICs), such as highspeed digital VLSI circuits, multichip modules (MCMs) and radio-frequency integrated circuits (RFICs). Because the signals in such IC's interconnects spread from dc up to the millimeterwave frequency and even beyond, the dispersion and losses from interconnects and lossy substrates will induce the amplitude attenuation and the waveform distortion of signals. Some on-chip planar multilayer structures have been proposed to achieve size reduction as well as improved transmission characteristics: the TFMSL [1], patterned ground shield [2], etc., where thin-film metallization layers are embedded as ground planes. Unlike conventional lossless microstrip transmission lines, in which the higher harmonic of pulses (compared to the inflection frequency) will travel at a lower velocity than the lower harmonics, typical IC interconnects are fabricated on lossy silicon substrates so as to owe three possible signal-propagation modes: the slow-wave mode, the skin-effect mode, and the quasi-TEM mode [3]. At low frequencies, the slow-wave mode becomes dominant. Besides, since the minimized thin-film ground is composed of real metal with finite conductivity, its profile dimension may be comparable to the relative skin depth a at certain frequencies. Thus the electromagnetic (EM) energy may leak through it into substrates backing this thin film to trigger high dispersion. Although several authors used approximation formula or equivalent circuit models to study the wave propagation [1]-[4], it is still difficult to investigate Air the dispersive characterization with a circuit model over a t a broad frequency range, which is required for transient analysis. / / s In order to qualify the analysis of such thin-film metallization, the full-wave EM method is definitely a need for the accurate PEC Ground transient analysis and for the validation of CAD designs. Fig. 1. TFMSL-type interconnect on Si substrate and SiO2 layer; w: In this paper, the thickness effect of the thin-film metallization signal line width; t: metallization layer on the transient signal propagation is studied by the SDA thickness; sc and us: metal and Si [5] with the FFT technique. One TFMSL-type interconnection conductivity; (Si: 250 pim; cr: 12; is used to show that the transient pulse propagation is 7s: 5 S/m; Cu: o7c: 58x10 S/m;influenced by the presence of the thin-film metal ground layer. SiO2:...

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“…After de-embedding the probe pad parasitic [6], the transmission parameters of the R, L, G, C, and Z are found by the simple network representations as [7][8]: Fig. 4(a) shows the extracted series resistance of the interconnect lines, where the narrower line width results in a higher resistance.…”

Section: G Gmentioning

confidence: 99%

Resistive Loss and Trans-Impedance Characterization of Nonlinear Transmission Lines on CMOS SOI Substrate

Kim

Kan

2005 Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electr

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We report the characterization of nonlinear transmission lines (NLTL) implemented with the MIT Lincoln Lab 0.18µm FDSOI (fully-depleted silicon-oninsulator) CMOS process up to 35GHz directly from Sparameter measurements. NLTL interconnect can significantly reduce the effective resistance loss while maintaining comparable inductance, capacitance, and conductance to those of normal interconnect lines in a broadband of frequencies. Hence, the signal integrity in high-speed interconnects can be improved. NLTL also provides a convenient way to tune the transmission-line characteristic impedance for impedance matching at microwave frequencies. Excellent properties of return and insertion losses further illustrate the competitive advantage of the NLTL as the interconnect line on CMOS substrates for System-on-a-Chip (SoC) applications.

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Enhanced transmission characteristics of on-chip interconnects with orthogonal gridded shield

Cited by 6 publications

References 13 publications

Modeling and Characterization of Slow-Wave Microstrip Lines on Metallic-Nanowire- Filled-Membrane Substrate

Modeling and Characterization of Slow-Wave Microstrip Lines on Metallic-Nanowire- Filled-Membrane Substrate

Transient Signal Distortion in Silicon-Based Interconnects over Thin-Film Metal Ground Layers

Resistive Loss and Trans-Impedance Characterization of Nonlinear Transmission Lines on CMOS SOI Substrate

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