Enhanced Surface Preparation Techniques for the Si/High-k Interface

Single-Wafer Wet Chemical Oxide Formation for Pre-ALD High-k Deposition on 300 mm Wafer

“…Wet chemical oxide formation prior to high-k deposition is one of the commonly used methods to prevent these problems [2,3]. Dilute (10 ppm) ozonated water (DIO 3 ) can make a uniform and saturated thin oxide film on a Si surface very easily: however, in the case of a sub-saturated thin oxide film, further optimization is required to provide a uniform layer across the wafer surface.…”

“…However, the contribution of the original interfacial thickness to EOT was less than initially expected. This difference is most probably related to the post deposition annealing (PDA) process of the post high-k deposition [2], i.e. high temperature budget oxided the interfacial oxide.…”