Enhanced light extraction efficiency from AlGaInP thin-film light-emitting diodes with photonic crystals

Bergenek, K.; Wiesmann, Christopher; Wirth, R.; О’Faolain, L.; Linder, N.; Streubel, K.; Krauss, Thomas F.

doi:10.1063/1.2963030

Cited by 34 publications

(22 citation statements)

References 13 publications

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“…In order to solve the problem, several method has been proposed, such as surface texture [3], photonic crystal [4], changing the chip shape [5], and auxiliary of transparent contact layer (TCL) on the GaP window layer [6]. Recently, the indium tin oxide (ITO) as TCL has exhibited as one of the most promising material for enhancement of light extraction in AlGaInP-base LED due to its excellent conductivity and optical transparency in the range of visible wavelength [7].…”

Section: Introductionmentioning

confidence: 99%

Study of Aluminum-doped zinc oxide current spreading layer on P-side up thin-film AlGaInP-based light-emitting diodes by ALD

et al. 2015

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A twice wafer-transfer technique can be used to fabricate high-brightness p-side-up thin-film AlGaInP-based light-emitting diodes (LEDs) with an aluminum-doped zinc oxide (AZO) thin films transparent conductive layer deposited on a GaP window layer. The GaP window layer consist of the two different doping profile, the carbon doped Gap (GaP:C) window layer of 50 nm is on the top of Mg doped GaP window layer of 8 μm. The GaP:C window layer is used to improved the ohmic contact properties of GaP:C/AZO. The AZO with different cycle ratio of Zn:Al (15:1, 20:1 and 25:1) is deposited on GaP:C window layer as current spreading layer by atomic layer deposition. The AZO layer can be used to improve light extraction, which enhances light output power. The output power of p-side-up thin-film AlGaInP LED with an AZO layer of 20:1 cycle ratio has improved up to 19.2 % at injection current of 350 mA, as compared with that of LED without AZO film. The p-side-up thin-film AlGaInP LED with AZO current spreading layer exhibited excellent performance stability, the emission wavelength shift of p-side-up thin-film AlGaInP LED without and with AZO thin film(Zn:Al=20:1) are 17 nm and 3 nm under the injection current increased from 20 mA to 1000mA, respectively. This stability can be attributed to the following factors: 1) Refractive index matching, performed by introducing AZO thin film between the epoxy and the GaP window layer enhances light extraction; and 2) the favorable thermal dissipation of the silicon substrate reduces thermal degradation.

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Section: Introductionmentioning

confidence: 99%

Study of Aluminum-doped zinc oxide current spreading layer on P-side up thin-film AlGaInP-based light-emitting diodes by ALD

et al. 2015

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“…Another technique under extensive ongoing investigations is to use photonic crystals, which are supposed to have the potential of signif- icantly increasing the light-extraction efficiency. However, it is still difficult for the photonic crystal technique to compete with the TIP and thin-film techniques since the highest EQE of AlGaInP LEDs using photonic crystals is only approximately 19% [6].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of ridge‐shaped AlGaInP/GaInP quantum well structure for observation of evanescent wave coupling effect

Hao

Seo

Wang

2011

Phys. Status Solidi C

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A ridge‐shaped AlGaInP/GaInP quantum well (QW) structure with a ridge top width in the sub‐wavelength region (500–600 nm) is successfully fabricated by selective area metal organic vapor phase epitaxial growth on patterned GaAs substrates, as the first step towards the realization of high‐efficiency light‐emitting diodes (LEDs) utilizing the evanescent wave coupling effect. It is confirmed by an X‐ray diffraction study that AlGaInP layers grown on all the different facets of the ridge structure satisfy the lattice matching requirements for high‐efficiency LED applications. A considerable enhancement of the light‐extraction efficiency in the fabricated ridge‐shaped QW structure is demonstrated by means of a photoluminescence analysis. The realization of the evanescent wave coupling effect is suggested by theoretical simulation. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…T HROUGH the Bragg diffraction with the photonic crystal (PhC), guided light in PhC LED chips can escape from the deleterious trapping effects due to total internal reflection [1]- [7]. Aperiodic PhC patterns have been reported for isotropic light extraction [6].…”

Section: Introductionmentioning

confidence: 99%

Far-Field and Near-Field Distribution of GaN-Based Photonic Crystal LEDs With Guided Mode Extraction

Lai

Chi

Kuo

et al. 2009

IEEE J. Select. Topics Quantum Electron.

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Abstract-The near-field and far-field distribution of GaN LEDs with square photonic crystal (PhC) lattice are experimentally investigated. The optical images of the near-field pattern are obtained from the guided electroluminescent light generated at the center of a special annular structure. For increasing lattice constant, symmetric patterns with varying number of petals according to the symmetry of the PhC are observed. The far-field distribution is studied with GaN-based film-transferred PhC LEDs with the thickness about 1500 nm. Angular-resolved measurements under electrical injection revealed guided modes extraction behavior and polarization based on the Bragg's diffraction with the PhC lattice. Good agreement with the two-dimension free photon band structure is obtained.

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Enhanced light extraction efficiency from AlGaInP thin-film light-emitting diodes with photonic crystals

Cited by 34 publications

References 13 publications

Study of Aluminum-doped zinc oxide current spreading layer on P-side up thin-film AlGaInP-based light-emitting diodes by ALD

Study of Aluminum-doped zinc oxide current spreading layer on P-side up thin-film AlGaInP-based light-emitting diodes by ALD

Fabrication of ridge‐shaped AlGaInP/GaInP quantum well structure for observation of evanescent wave coupling effect

Far-Field and Near-Field Distribution of GaN-Based Photonic Crystal LEDs With Guided Mode Extraction

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