We report the fabrication of InGaN/GaN nanorod light-emitting diodes (LEDs) using inductively coupled plasma reactive-ion etching (ICP-RIE) and a photo-enhanced chemical (PEC) wet oxidation process via self-assembled Ni nanomasks. An enhancement by a factor of six times in photoluminescence (PL) intensities of nanorods made with the PEC process was achieved in comparison to that of the as-grown structure. The peak wavelength observed from PL measurement showed a blue shift of 3.8 nm for the nanorods made without the PEC oxidation process and 8.6 nm for the nanorods made with the PEC oxidation process from that of the as-grown LED sample. In addition, we have demonstrated electrically pumped nanorod LEDs with the electroluminescence spectrum showing more efficiency and a 10.5 nm blue-shifted peak with respect to the as-grown LED sample.

Articles you may be interested inHighly-directional emission patterns based on near single guided mode extraction from GaN-based ultrathin microcavity light-emitting diodes with photonic crystals Appl. Phys. Lett. 97, 013108 (2010); 10.1063/1.3459970 Enhancement of light extraction from GaN-based green light-emitting diodes using selective area photonic crystal Appl. Phys. Lett. 96, 251103 (2010); 10.1063/1.3454240 Measurement of extraction and absorption parameters in GaN-based photonic-crystal light-emitting diodes

Novel quasi-amorphous structural color resin films are highly transparent, and have a uniform shining reflection color and physical rigidity, and so have enormous potential.

InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si-heavily doped GaN epitaxial layers (n+-GaN) in the 12-period n+-GaN/u-GaN stack structure are transformed into low refractive index nanoporous GaN structure through the doping-selective electrochemical wet etching process. The central wavelength of the nanoporous DBR structure was located at 442.3 nm with a 57 nm linewidth and a 97.1% peak reflectivity. The effective cavity length (6.0λ), the effective penetration depth (278 nm) in the nanoporous DBR structure, and InGaN active layer matching to Fabry-Pérot mode order 12 were observed in the far-field photoluminescence radiative spectra. High electroluminescence emission intensity and line-width narrowing effect were measured in the DBR-LED compared with the non-treated LED structure. Non-linear emission intensity and line-width reducing effect, from 11.8 nm to 0.73 nm, were observed by increasing the laser excited power. Resonant cavity effect was observed in the InGaN LED with bottom nanoporous-DBR and top GaN/air interface.

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